N Channel Power MOSFET Siliup SP010N10GP8 100V Low Gate Charge Fast Switching Device
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Product Description
Product Overview
The SP010N10GP8 is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET has undergone 100% single pulse avalanche energy testing and is suitable for battery management and uninterruptible power supply systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: N-Channel Power MOSFET
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse Avalanche Energy Test
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 100 | V | ||||
| RDS(on) TYP | @10V | 10 | m | |||
| RDS(on) TYP | @4.5V | 13 | m | |||
| ID | 12 | A | ||||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 100 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 12 | A | |||
| Continuous Drain Current (Ta=100C) | ID | 8 | A | |||
| Pulse Drain Current Tested | IDM | 48 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 30 | mJ | |||
| Power Dissipation | PD | 3.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 35.71 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.2 | 1.9 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 10 | 14 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 10A | - | 13 | 18 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1635 | - | pF |
| Output Capacitance | Coss | - | 339 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=10A | - | 29 | - | nC |
| Gate-Source Charge | Qgs | - | 8 | - | nC | |
| Gate-Drain Charge | Qgd | - | 5 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS =10V, VDS =50V, ID=10A, RG = 3 | - | 11 | - | nS |
| Rise Time | tr | - | 32 | - | ||
| Turn-Off Delay Time | td(off) | - | 27 | - | ||
| Fall Time | tf | - | 9 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 12 | A | |
| Reverse Recovery Time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 43 | - | nS |
| Reverse Recovery Charge | Qrr | - | 32 | - | nC | |
| Package Information | ||||||
| Device Code | 010N10G | |||||
| Package | SOP-8L | |||||
| Marking | 010N10G | |||||
| Dimensions (SOP-8L) | Symbol | Dimensions In Millimeters | Min | Max | ||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP010N10GP8 | SOP-8L | 4000 | ||||
1 The EAS test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25
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