NPN Transistor Slkor BC849B SOT23 Package Low Voltage and Low Current Suitable for Electronic Devices
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Delivery Time:
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Product Description
Product Overview
The BC849-BC850 series are NPN transistors designed for low current and low voltage applications. These transistors offer features such as low current consumption (max. 100 mA) and low operating voltage (max. 45 V). They are suitable for various electronic circuits requiring reliable amplification and switching capabilities within these parameters.
Product Attributes
- Type: NPN Transistors
- Brand: slkormicro (indicated by URL)
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Rating/Conditions | Unit | Min | Typ | Max |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Emitter-Base Voltage | VEBO | Ta = 25 C | V | 5 | ||
| Collector Current (DC) | IC | Ta = 25 C | mA | 100 | ||
| Peak Collector Current | ICM | Ta = 25 C | mA | 200 | ||
| Peak Base Current | IBM | Ta = 25 C | mA | 200 | ||
| Total Power Dissipation | Ptot | Ta = 25 C (Transistor mounted on an FR4 printed-circuit board) | mW | 250 | ||
| Storage Temperature | Tstg | C | -65 | 150 | ||
| Junction Temperature | Tj | C | 150 | |||
| Operating Ambient Temperature | Tamb | C | -65 | 150 | ||
| Thermal Resistance Junction to Ambient | Rth(j-a) | Ta = 25 C (Transistor mounted on an FR4 printed-circuit board) | K/W | 500 | ||
| Collector-Base Voltage | VCBO | V | 30 | |||
| Collector-Emitter Voltage | VCEO | V | 45 | |||
| Electrical Characteristics | ||||||
| Emitter Cut-off Current | IEBO | IE = 0; VCB = 30 V; Ta = 25 C | nA | 15 | ||
| Emitter Cut-off Current | IEBO | IE = 0; VCB = 30 V; Tj = 150 C | A | 5 | ||
| Collector Cut-off Current | ICBO | IC = 0; VEB = 5 V | nA | 100 | ||
| DC Current Gain | hFE | IC = 10 mA; IB = 0.5 mA | 250 | |||
| DC Current Gain | hFE | IC = 100 mA; IB = 5 mA | 600 | |||
| Base-Emitter Saturation Voltage | VBEsat | IC = 10 mA; IB = 0.5 mA | mV | 700 | ||
| Base-Emitter Saturation Voltage | VBEsat | IC = 100 mA; IB = 5 mA | mV | 900 | ||
| Collector-Emitter Saturation Voltage | VCEsat | IC = 2 mA; VCE = 5 V; hFE | mV | 660 | 700 | |
| Collector-Emitter Saturation Voltage | VCEsat | IC = 10 mA; VCE = 5 V; hFE | mV | 770 | ||
| Base-Emitter Voltage | VBE | IC = 2 mA; VCE = 5 V; *2 | mV | 580 | ||
| Collector Capacitance | Cc | IE = ie = 0; VCB = 10 V; f = 1 MHz | pF | 2.5 | ||
| Emitter Capacitance | Ce | IC = ic = 0; VEB = 500 mV; f = 1 MHz | pF | 11 | ||
| Transition Frequency | fT | IC = 10 mA; VCE = 5 V; f = 100 MHz | MHz | 100 | ||
| Noise Figure | F | IC = 200 A; VCE = 5 V; RS = 2 k, f = 10 Hz to 15.7 kHz | dB | 4 | ||
| Noise Figure | F | IC = 200 A; VCE = 5 V; RS = 2 k, f = 1 kHz; B = 200 Hz | dB | 4 | ||
| Model Specific DC Current Gain (hFE) | ||||||
| Model | IC = 10 mA; IB = 0.5 mA | Min | Typ | Max | ||
| BC849B / BC850B | 240 | |||||
| BC849C / BC850C | 450 | |||||
| Model | IC = 100 mA; IB = 5 mA | Min | Typ | Max | ||
| BC849B / BC850B | 200 | 290 | 450 | |||
| BC849C / BC850C | 420 | 520 | 800 | |||
| Dimensions (mm) | ||||||
| Dimension | Symbol | Value | Unit | |||
| Length | A | 1.1 | mm | 0.9 | 1.4 | |
| Height (max) | A1 | 0.1 | mm | |||
| Width | bp | 0.48 | mm | 0.38 | 0.58 | |
| Width | D | 3.0 | mm | 2.8 | 3.1 | |
| Width | E | 2.5 | mm | 2.1 | 2.7 | |
| Width | e | 1.9 | mm | |||
| Width | e1 | 1.2 | mm | 0.95 | 1.45 | |
| Height | Lp | 0.55 | mm | 0.45 | 0.65 | |
| Height | Q | 0.15 | mm | 0.10 | 0.20 | |
| Width | w | 0.45 | mm | 0.40 | 0.50 | |
| Height | v | 0.1 | mm | 0.25 | ||
| Classification Marking | BC849B: 2B, BC849C: 2C, BC850B: 2F, BC850C: 2G | |||||
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