High Current 60V N Channel MOSFET Siliup 2SK3019 Featuring 2KV ESD Protection for Surface Mount Applications

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The 2SK3019 is a 60V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This surface-mount device offers high power and current handling capability, making it suitable for applications such as battery switches and DC/DC converters. It features ESD protection up to 2KV.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: Ver-1.2
Package Type: SOT-523
ESD Protection: 2KV

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			60		V
Static Drain-Source On-Resistance	RDS(on)	VGS=10V		2
Static Drain-Source On-Resistance	RDS(on)	VGS=4.5V		2.5
Continuous Drain Current	ID				100	mA
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	(Ta=25, unless otherwise noted)		60		V
Gate-Source Voltage	VGSS	(Ta=25, unless otherwise noted)		20		V
Continuous Drain Current	ID	(Ta=25, unless otherwise noted)			100	mA
Pulse Drain Current	IDM	(Tested)			400	mA
Power Dissipation	PD	(Ta=25, unless otherwise noted)			150	mW
Thermal Resistance Junction-to-Ambient	RJA	(Ta=25, unless otherwise noted)			833	C/W
Storage Temperature Range	TSTG	(Ta=25, unless otherwise noted)	-55		150	C
Operating Junction Temperature Range	TJ	(Ta=25, unless otherwise noted)	-55		150	C
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250A	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	10	uA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=250A	0.7	1	1.45	V
Static Drain-Source On-Resistance	RDS(ON)	VGS =10V, ID =200mA	-	2	5
Static Drain-Source On-Resistance	RDS(ON)	VGS =4.5V, ID =100mA	-	2.5	8
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	-	12	-	pF
Output Capacitance	Coss	VDS=25V , VGS=0V , f=1MHz	-	6	-	pF
Reverse Transfer Capacitance	Crss	VDS=25V , VGS=0V , f=1MHz	-	2.5	-	pF
Total Gate Charge	Qg	VDS=10V , VGS=15V , ID=1A	-	1.34	-	nC
Gate-Source Charge	Qgs	VDS=10V , VGS=15V , ID=1A	-	0.29	-
Gate-Drain Charge	Qg	VDS=10V , VGS=15V , ID=1A	-	0.2	-
Turn-On Delay Time	td(on)	VDD=15V VGS=10V , RG=2.3 , ID=1A	-	5	-	nS
Turn-On Rise Time	tr	VDD=15V VGS=10V , RG=2.3 , ID=1A	-	18	-
Turn-Off Delay Time	td(off)	VDD=15V VGS=10V , RG=2.3 , ID=1A	-	8	-
Turn-Off Fall Time	tf	VDD=15V VGS=10V , RG=2.3 , ID=1A	-	14	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Package Information (SOT-523)
Symbol	Dimensions In Millimeters	Min	Max
A		0.700	0.900
A1		0.000	0.100
A2		0.700	0.800
b1		0.150	0.250
b2		0.250	0.350
C		0.100	0.200
D		1.500	1.700
E		0.700	0.900
E1		1.450	1.750
e		0.500 (TYP)
e1		0.900	1.100
L		0.400 (REF)
L1		0.260	0.460
		0	8