100V N Channel MOSFET Siliup SP010N08GTD with Fast Switching Low Rdson and Avalanche Energy Tested
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Product Description
Product Overview
The SP010N08GTD is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low Rdson, enabled by advanced split gate trench technology. This MOSFET is 100% single pulse avalanche energy tested and is suitable for power switching applications, battery management, and uninterruptible power supplies. The device is available in a TO-263 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010N08GTD
- Technology: Advanced Split Gate Trench Technology
- Package: TO-263
- Channel Type: N-Channel
- Marking: 010N08G
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 100 | V | ||||
| RDS(on)TYP | @10V | 8.5 | m | |||
| RDS(on)TYP | @4.5V | 11 | m | |||
| ID | 65 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 100 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | (Tc=25) | 65 | A | ||
| Continuous Drain Current | ID | (Tc=100) | 45 | A | ||
| Pulsed Drain Current | IDM | 260 | A | |||
| Single Pulse Avalanche Energy | EAS | 156 | mJ | |||
| Power Dissipation | PD | (Tc=25) | 110 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 1.14 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 100 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 1.2 | 1.9 | 2.5 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 8.5 | 12 | m |
| Drain-Source ON Resistance | RDS(ON) | VGS = 4.5V, ID = 15A | - | 11 | 15 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - | 1635 | - | pF |
| Output Capacitance | Coss | - | 339 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 22 | - | pF | |
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=50A | - | 14 | - | nC |
| Gate-Source Charge | Qgs | - | 5 | - | nC | |
| Gate-Drain Charge | Qg d | - | 7 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=50A RG = 4.7 | - | 8 | - | nS |
| Rise Time | tr | - | 16 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 31 | - | nS | |
| Fall Time | tf | - | 27 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 65 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 49 | - | nS |
| Reverse Recovery Charge | Qrr | - | 78 | - | nC | |
Note: EAS test condition is VDD=50V, VGS=10V, L=0.5mH, RG=25.
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