General purpose PNP transistor Slkor 2SA812-M7 with high collector emitter voltage and current gain

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Product Description

Product Overview

The 2SA812 is a PNP bipolar junction transistor (BJT) encapsulated in a SOT-23 plastic package. It is designed as a complementary type to the 2SC1623 transistor. Key features include a high DC current gain (hFE) of up to 200 TYP. at VCE=-6V and IC=-1mA, and a high collector-emitter voltage rating of -50V. This transistor is suitable for general-purpose amplification and switching applications where these characteristics are beneficial.

Product Attributes

Type: PNP Transistor
Package: SOT-23 Plastic-Encapsulated
Complementary to: 2SC1623
Marking: M4, M5, M6, M7 (depending on hFE rank)

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Units
Collector-Base Voltage	VCBO				-60	V
Collector-Emitter Voltage	VCEO				-50	V
Emitter-Base Voltage	VEBO				-5	V
Collector Current - Continuous	IC				-100	mA
Collector Power Dissipation	PC	TA=25			200	mW
Junction Temperature	TJ				150
Storage Temperature	Tstg		-55		150
Collector-base breakdown voltage	V(BR)CBO	IC=-100A, IE=0	-60			V
Collector-emitter breakdown voltage	V(BR)CEO	IC= -1mA, IB=0	-50			V
Emitter-base breakdown voltage	V(BR)EBO	IE= -100A, IC=0	-5			V
Collector cut-off current	ICBO	VCB=- 60 V, IE=0			-0.1	A
Emitter cut-off current	IEBO	VEB= -5V, IC=0			-0.1	A
DC current gain	hFE	VCE=- 6V, IC= -1mA	90		600
Collector-emitter saturation voltage	VCE(sat)	IC=-100mA, IB= -10mA			-0.3	V
Base-emitter voltage	VBE	IC=-1mA, VCE=-6V		-0.58	-0.68	V
Transition frequency	fT	VCE=-6V, IC= -10mA		180		MHz
Collector output capacitance	Cob	VCB=-10V,IE=0,f=1MHz			4.5	pF