N Channel Power MOSFET 150V Siliup SP015N09GHTD Featuring Split Gate Trench Technology for Switching
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Product Description
Product Overview
The SP015N09GHTD is a 150V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced Split Gate Trench Technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for PWM applications, hard switched and high-frequency circuits, and power management solutions. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 015N09GH
- Package: TO-263
- Channel Type: N-Channel
- Technology: Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | 150 | V | ||||
| RDS(on) | 10V | 9 | m | |||
| ID | 90 | A | ||||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 150 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 90 | A | |||
| Continuous Drain Current (Tc=100) | ID | 60 | A | |||
| Pulsed Drain Current | IDM | 360 | A | |||
| Single Pulse Avalanche Energy1 | EAS | 462 | mJ | |||
| Power Dissipation (Tc=25) | PD | 180 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.69 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 150 | - | - | V |
| Drain Cut-Off Current | IDSS | VDS = 120V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 | 3.0 | 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 9 | 12 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=75V , VGS=0V , f=1MHz | - | 3310 | - | pF |
| Output Capacitance | Coss | - | 268 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 9 | - | pF | |
| Total Gate Charge | Qg | VDS=75V , VGS=10V , ID=20A | - | 30 | - | nC |
| Gate-Source Charge | Qgs | - | 17.8 | - | ||
| Gate-Drain Charge | Qgd | - | 7 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=75V , VGS=10V , RG=6 ID=20A | - | 13 | - | nS |
| Rise Time | tr | - | 25 | - | ||
| Turn-Off Delay Time | td(off) | - | 31 | - | ||
| Fall Time | tf | - | 25 | - | ||
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 90 | A | |
| Reverse Recovery Time | trr | IS=20A, di/dt=200A/us, TJ=25 | - | 78 | - | nS |
| Reverse Recovery Charge | Qrr | - | 185 | - | nC | |
Note: 1. The test condition is VDD=50V,VGS=10V,L=0.5mH,RG=25
Package Information
TO-263 Package Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP015N09GHTD | TO-263 | 800 |
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