30 Volt MOSFET Siliup SP30N06GTH N Channel Low Gate Charge TO 252 Package Power Device

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Product Description

Product Overview

The SP30N06GTH is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Engineered with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications and DC-DC converters. It is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 30N06G
Package: TO-252

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
V(BR)DSS					30	V
RDS(on)TYP		@10V		6.5		m
RDS(on)TYP		@4.5V		10		m
ID					40	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS				30	V
Gate-Source Voltage	VGS				20	V
Continuous Drain Current (Tc=25)	ID				40	A
Continuous Drain Current (Tc=100)	ID				27	A
Pulsed Drain Current	IDM				160	A
Single Pulse Avalanche Energy	EAS				39.2	mJ
Power Dissipation (Tc=25)	PD				35	W
Thermal Resistance Junction-to-Case	RJC				3.57	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250uA	30	-	-	V
Drain Cut-Off Current	IDSS	VDS=30V, VGS=0V	-	-	1	uA
Gate Leakage Current	IGSS	VGS=20V, VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS, ID =250uA	1	1.7	2.5	V
Drain-Source ON Resistance	RDS(ON)	VGS=10V, ID=12A	-	6.5	8.2	m
Drain-Source ON Resistance	RDS(ON)	VGS=4.5V, ID=12A	-	10	13.5	m
Dynamic Characteristics
Input Capacitance	Ciss	VDS=15V,VGS=0V,f=1MHZ	-	625	-	pF
Output Capacitance	Coss		-	240	-	pF
Reverse Transfer Capacitance	Crss		-	25	-	pF
Total Gate Charge	Qg	VGS=10V,VDS=15V,ID=12A	-	7.1	-	nC
Gate-Source Charge	Qgs		-	2.2	-	nC
Gate-Drain Charge	Qg d		-	3.1	-	nC
Switching Characteristics
Turn-On Delay Time	td(on)	VGS=10V,VDD=15V, ID=12A, RGEN=2	-	7	-	nS
Rise Time	tr		-	18.8	-	nS
Turn-Off Delay Time	td(off)		-	19.5	-	nS
Fall Time	tf		-	3.4	-	nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage	VSD	IS = 1A, VGS = 0V	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	40	A
Reverse Recovery Time	Trr	IS=20A, di/dt=100A/us, TJ=25	-	11	-	nS
Reverse Recovery Charge	Qrr		-	18	-	nC
Package Information (TO-252)
Symbol	Dimensions In Millimeters	Dimensions In Inches	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830 REF.		0.190 REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900 REF.		0.114 REF.
L2	1.400	1.700	0.055	0.067
L3	1.600 REF.		0.063 REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350 REF.		0.211 REF.