general purpose NPN transistor Slkor 2SD965A-R with simplified SOT89 package and high current capability

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Product Description

Product Overview

The 2SD965A is an NPN transistor designed for general-purpose applications. It offers a simplified outline in an SOT-89 package, featuring low saturation voltage and large collector power dissipation and current capabilities. This transistor is suitable for various electronic circuits requiring reliable amplification and switching.

Product Attributes

Type: NPN Transistor
Package: SOT-89
Marking: 2SD965A

Technical Specifications

Parameter	Symbol	Rating	Unit	Test Conditions	Min	Typ	Max
Absolute Maximum Ratings (Ta = 25)
Collector - Base Voltage	VCBO	40	V
Collector - Emitter Voltage	VCEO	30	V
Emitter - Base Voltage	VEBO	7	V
Collector Current - Continuous	IC	5	A
Collector Power Dissipation	PC	750	mW
Thermal Resistance From Junction To Ambient	RJA	167	/W
Junction Temperature	TJ	150
Storage Temperature Range	Tstg	-55 to 150
Electrical Characteristics (Ta = 25)
Collector- base breakdown voltage	VCBO	40	V	Ic= 100 A IE= 0
Collector- emitter breakdown voltage	VCEO	30	V	Ic= 1 mA IB= 0
Emitter - base breakdown voltage	VEBO	7	V	IE= 100A IC= 0
Collector-base cut-off current	ICBO		nA	VCB= 10 V , IE= 0			100
Emitter cut-off current	IEBO		nA	VEB= 7V , IC=0			100
Collector-emitter saturation voltage	VCE(sat)		V	IC=3 A, IB=100mA			1
Base - emitter saturation voltage	VBE(sat)		V	IC=3 A, IB=100mA		1	1.2
DC current gain	hFE			VCE= 2V, IC= 1mA	200
				VCE= 2V, IC= 500mA	230		950
				VCE= 2V, IC= 2A	150
Collector output capacitance	Cob		pF	VCB= 20V, IE= 0,f=1MHz			50
Transition frequency	fT	150	MHz	VCE= 6V, IC= 50mA
Classification of hfe(2)
Type
2SD965A-Q				Range	230-380
2SD965A-R				Range	340-600
2SD965A-S				Range	560-800
SOT-89 Dimensions (mm)
Unit	A	D	E	HE	Lp	w	e1
mm	1.6 - 1.4	4.6 - 4.4	2.6 - 2.4	4.25 - 3.75	3.0	0.13	1.5 - 1.2
Unit	c	bp2	bp1	bp3	e
mm	0.48 - 0.35	0.53 - 0.40	1.8 - 1.4	0.44 - 0.23	3.0