"Power Management Applications Slkor SL403 P Channel Enhancement Mode MOSFET with Low On Resistance"
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Product Description
SL403 P-Channel Enhancement Mode MOSFET
The SL403 is a P-Channel Enhancement Mode MOSFET designed for power management applications. It offers reliable and rugged performance with low on-resistance and high efficiency. Available in lead-free and green devices, it is RoHS compliant.
Product Attributes
- Brand: SLKormicro
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | ID=-250A, VGS=0V | -30 | V | ||
| Gate-Source Voltage | 25 | V | |||
| Continuous Drain Current | Tc=25C | -70 | A | ||
| Continuous Drain Current | Tc=100C | -55 | A | ||
| Pulsed Drain Current | Tc=25C | -200 | A | ||
| Continuous Drain Current | TA=25C | -15 | A | ||
| Continuous Drain Current | TA=70C | -12 | A | ||
| Power Dissipation | TC=25C | 90 | W | ||
| Power Dissipation | TC=100C | 45 | W | ||
| Storage Temperature Range | -55 | 175 | C | ||
| Power Dissipation | TA=25C | 2.5 | W | ||
| Power Dissipation | TA=70C | 1.6 | W | ||
| Single pulsed avalanche Current | C | -50 | A | ||
| Single pulsed avalanche energy | L=0.1mH | 125 | mJ | ||
| Thermal Resistance-Junction to Case | Staedy-State | 1.6 | C/W | ||
| Thermal Resistance-Junction to Ambient | AD t 10S | 20 | C/W | ||
| Thermal Resistance-Junction to Ambient | Staedy-State | 50 | C/W | ||
| Gate Threshold Voltage | ID=-250A, VGS=0V | -1.5 | -2.5 | -3.5 | V |
| On state drain current | VGS=-10V, ID=-20A | -200 | A | ||
| Static Drain-Source On-Resistance | VGS=-20V, ID=-20A | 5.1 | m | ||
| Static Drain-Source On-Resistance | VGS=-10V, ID=-20A | 6.2 | m | ||
| Forward Transconductance | VDS=-5V, ID=-20A | 42 | S | ||
| Diode Forward Voltage | IS=-1A,VGS=0V | -0.7 | -1 | V | |
| Reverse Transfer Capacitance | VGS=0V, VDS=0V, f=1MHz | 280 | 660 | pF | |
| Input Capacitance | VGS=0V, VDS=-15V, f=1MHz | 2310 | 3500 | pF | |
| Output Capacitance | VGS=0V, VDS=-15V, f=1MHz | 410 | 760 | pF | |
| Gate resistance | 1.9 | 5.7 | |||
| Zero Gate Voltage Drain Current | VDS=VGS ID=-250A | -1 | A | ||
| Gate-Body leakage current | VGS= 25V | 100 | nA | ||
| On-Resistance | VGS=-10V, ID=-20A | 6.2 | 8 | m | |
| On-Resistance | VGS=-20V, ID=-20A | 5.1 | 6.2 | m | |
| Total Gate Charge | VGS=-10V, VDS=-15V, ID=-20A | 40 | 61 | nC | |
| Gate Source Charge | 10 | 14 | nC | ||
| Gate Drain Charge | 10 | 22 | nC | ||
| Turn-On DelayTime | VGS=-10V, VDS=-15V, RL=0.75, RGEN=3 | 16 | ns | ||
| Turn-On Rise Time | 12 | ns | |||
| Turn-Off DelayTime | 45 | ns | |||
| Turn-Off Fall Time | 22 | ns | |||
| Body Diode Reverse Recovery Time | IF=-20A, dI/dt=100A/s | 14 | 22 | ns | |
| Body Diode Reverse Recovery Charge | IF=-20A, dI/dt=100A/s | 9 | 13 | nC |
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Sellina