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High Current P Channel MOSFET Slkor AOD409 Offering Fully Characterized Avalanche Voltage and Current

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Product Description

AOD409 -60V/-30A P-Channel MOSFET

The AOD409 is a P-Channel MOSFET designed for high-density cell applications, offering ultra-low RDS(ON). It features fully characterized avalanche voltage and current, and an excellent package for efficient heat dissipation. This MOSFET is suitable for PWM applications, power management, and load switch functionalities.

Product Attributes

  • Brand: slkormicro
  • Model: AOD409

Technical Specifications

ParameterConditionMinTypMaxUnit
Static Electrical CharacteristicsDrain-Source Breakdown Voltage (BVDSS)VGS=0VID=-250A-60V
Zero Gate Voltage Drain Current (IDSS)VDS=-60VVGS=0V-1uA
Gate-Body Leakage Current (IGSS)VGS=20VVDS=0V100nA
Gate Threshold Voltage (VGS(th))VDS=VGSID=-250A-1.0-1.8-2.5V
Drain-Source On-State Resistance (RDS(on))VGS=-10VID=-20A3040m
VGS=-4.5VID=-15A4050m
CapacitanceInput Capacitance (CISS)VDS=-30VVGS=0V f=1MHz2156pF
Output Capacitance (COSS)143pF
Reverse Transfer Capacitance (CRSS)100pF
Switching CharacteristicsTotal Gate Charge (Qg)VDS=-30VID=-9A VGS=-10V40nC
Gate Source Charge (Qgs)7nC
Gate Drain Charge (Qgd)8nC
Turn-on Delay Time (td(on))VDD=-30VID=-9A VGS=-10VRG=312nS
Turn-on Rise Time (tr)14nS
Turn-Off Delay Time (td(off))38nS
Turn-Off Fall Time (tf)15nS
Source-Drain Diode CharacteristicsForward on voltage (VSD)TJ=25IS=-30A-1.2V
Diode Continuous Forward Current (IS)TC=25C-30A
Absolute Maximum RatingsDrain-Source Voltage (VDS)-60V
Gate-Source Voltage (VGS)20V
Maximum Junction Temperature (TJ)150C
Storage Temperature Range (TSTG)-55150C
Maximum Power DissipationPower Dissipation (PD)TC=25C, Mounted on Large Heat Sink80W
Thermal Resistance Junction-to-Ambient (RJA)50C/W
Pulsed Drain CurrentPulse Drain Current (IDM)TC=25C-135A
Tested Continuous Drain Current (ID)TC=25C-30A

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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