Surface Mount Dual N Channel MOSFET Siliup SP2002KDTL 20V Device Featuring 2KV ESD Protection for DC DC Converters
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP2002KDTL is a 20V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface mount device features ESD protection up to 2KV. It is ideal for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 02K
- Package: SOT-563
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| RDS(on) | @4.5V | 250 | m | |||
| ID | 0.75 | A | ||||
| RDS(on) | @2.5V | 350 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | 0.75 | A | |||
| Pulse Drain Current | IDM | Tested | 3 | A | ||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 833 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250A | 20 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=16V , VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 10 | uA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.30 | 0.65 | 1.00 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=500mA | - | 250 | 380 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V , ID=200mA | - | 350 | 450 | m |
| Input Capacitance | Ciss | VDS=10V , VGS=0V , f=1MHz | - | 35 | - | pF |
| Output Capacitance | Coss | - | 19 | - | ||
| Reverse Transfer Capacitance | Crss | - | 9 | - | ||
| Total Gate Charge | Qg | VDS=10V , VGS=4.5V , ID=500mA | - | 0.8 | - | nC |
| Gate-Source Charge | Qgs | - | 0.3 | - | ||
| Gate-Drain Charge | Qg d | - | 0.16 | - | ||
| Turn-On Delay Time | td(on) | VDD=10V VGS=4.5V , RG=10 , ID=500mA | - | 4 | - | nS |
| Turn-On Rise Time | tr | - | 19 | - | ||
| Turn-Off Delay Time | td(off) | - | 10 | - | ||
| Turn-Off Fall Time | tf | - | 21 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Package Information (SOT-563) | ||||||
| Symbol | Dimensions In Millimeters | Min | Max | |||
| A | 0.525 | 0.600 | ||||
| A1 | 0.000 | 0.050 | ||||
| e | 0.450 | 0.550 | ||||
| c | 0.090 | 0.160 | ||||
| D | 1.500 | 1.700 | ||||
| b | 0.170 | 0.270 | ||||
| E1 | 1.100 | 1.300 | ||||
| E | 1.500 | 1.700 | ||||
| L | 0.100 | 0.300 | ||||
| L1 | 0.200 | 0.400 | ||||
| Ref. | 7 | |||||
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