Dual N Channel MOSFET power switching device Siliup SP60N80DP8 with 60V voltage rating and low RDSon
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Product Description
Product Overview
The SP60N80DP8 is a 60V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for power switching applications, it features fast switching, low gate charge, and low RDS(on). This MOSFET is suitable for hard-switched and high-frequency circuits, including Uninterruptible Power Supplies. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60N80DP8
- Technology: Dual N-Channel MOSFET
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Breakdown Voltage (Drain-Source) | V(BR)DSS | 60 | V | |||
| On-Resistance (Typical) | RDS(on)TYP | @10V | 80 | m | ||
| On-Resistance (Typical) | RDS(on)TYP | @4.5V | 90 | m | ||
| Continuous Drain Current | ID | 3.5 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25) | 60 | V | ||
| Gate-Source Voltage | VGS | (Ta=25) | 20 | V | ||
| Continuous Drain Current | ID | (Ta=25) | 3.5 | A | ||
| Pulsed Drain Current | IDM | (Ta=25) | 14 | A | ||
| Power Dissipation | PD | (Ta=25) | 2 | W | ||
| Thermal Resistance (Junction-to-Ambient) | RJA | (Ta=25) | 62.5 | /W | ||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=48V, VGS=0V | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.2 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=3.5A | - | 80 | 100 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=2.5A | - | 90 | 120 | m |
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | - | 420 | - | pF |
| Output Capacitance | Coss | VDS=30V, VGS=0V, f=1MHz | - | 48 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=30V, VGS=0V, f=1MHz | - | 20 | - | pF |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=2A | - | 8 | - | nC |
| Gate-Source Charge | Qgs | VDS=30V, VGS=10V, ID=2A | - | 4 | - | nC |
| Gate-Drain Charge | Qgd | VDS=30V, VGS=10V, ID=2A | - | 2.5 | - | nC |
| Turn-On Delay Time | Td(on) | VDD=30V, VGS=10V, RG=3, ID=2A | - | 7 | - | nS |
| Rise Time | Tr | VDD=30V, VGS=10V, RG=3, ID=2A | - | 4.3 | - | nS |
| Turn-Off Delay Time | Td(off) | VDD=30V, VGS=10V, RG=3, ID=2A | - | 19 | - | nS |
| Fall Time | Tf | VDD=30V, VGS=10V, RG=3, ID=2A | - | 3 | - | nS |
| Diode Forward Voltage | VSD | VGS=0V, IS=1A | - | - | 1.2 | V |
| Package Dimensions (SOP-8L) | ||||||
| Dimension | Symbol | Min. | Max. | Unit | ||
| A | 1.35 | 1.75 | mm | |||
| A1 | 0.10 | 0.25 | mm | |||
| A2 | 1.35 | 1.55 | mm | |||
| b | 0.33 | 0.51 | mm | |||
| c | 0.17 | 0.25 | mm | |||
| D | 4.80 | 5.00 | mm | |||
| e | 1.27 REF. | |||||
| E | 5.80 | 6.20 | mm | |||
| E1 | 3.80 | 4.00 | mm | |||
| L | 0.40 | 1.27 | mm | |||
| 0 | 8 | |||||
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