250V N Channel Planar MOSFET Siliup SP80N25TF with High Continuous Drain Current and Low Gate Charge
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Product Description
Product Overview
The SP80N25TF is a 250V N-Channel Planar MOSFET designed for power switching applications. It features fast switching, low gate charge, and low RDS(on), making it suitable for DC-DC converters and power management systems. This MOSFET is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP80N25TF
- Technology: N-Channel Planar MOSFET
- Package: TO-247-3L
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Condition | ||
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 250 | V | |||
| RDS(on) Typ. | RDS(on) | 35 | m | @10V | ||
| Continuous Drain Current | ID | 80 | A | |||
| Drain-Source Voltage | VDS | 250 | V | (Ta=25, unless otherwise noted) | ||
| Gate-Source Voltage | VGS | 20 | V | (Ta=25, unless otherwise noted) | ||
| Continuous Drain Current (Tc=25) | ID | 80 | A | (Ta=25, unless otherwise noted) | ||
| Pulsed Drain Current | IDM | 320 | A | (Ta=25, unless otherwise noted) | ||
| Power Dissipation (Tc=25) | PD | 500 | W | (Ta=25, unless otherwise noted) | ||
| Single Pulsed Avalanche Energy | EAS | 3588 | mJ | 1) | ||
| Thermal Resistance, Junction-Case | RJC | 0.25 | /W | (Ta=25, unless otherwise noted) | ||
| Operation and Storage Temperature | Tstg, Tj | -55 to 150 | (Ta=25, unless otherwise noted) | |||
| Drain-Source Breakdown Voltage | BVDSS | 250 | V | ID = 250A, VGS = 0V | ||
| Drain Cut-Off Current | IDSS | - | 1 | A | VDS = 200V, VGS = 0V | |
| Gate Leakage Current | IGSS | - | 0.1 | A | VGS = 20V, VDS = 0V | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250A |
| Drain-Source ON Resistance | RDS(ON) | - | 35 | 45 | m | VGS = 10V, ID = 40A |
| Input Capacitance | Ciss | - | 5250 | - | pF | VDS =25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | - | 980 | - | pF | VDS =25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | - | 95 | - | pF | VDS =25V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | - | 134 | - | nC | VDS=200V , VGS=10V , ID=40A |
| Gate-Source Charge | Qgs | - | 56 | - | nC | VDS=200V , VGS=10V , ID=40A |
| Gate-Drain Charge | Qgd | - | 58 | - | nC | VDS=200V , VGS=10V , ID=40A |
| Turn-On Delay Time | td(on) | - | 53 | - | ns | VGS = 10V, VDS =125V, ID=40A , RG = 10 |
| Rise Time | tr | - | 242 | - | ns | VGS = 10V, VDS =125V, ID=40A , RG = 10 |
| Turn-Off Delay Time | td(off) | - | 256 | - | ns | VGS = 10V, VDS =125V, ID=40A , RG = 10 |
| Fall Time | tf | - | 116 | - | ns | VGS = 10V, VDS =125V, ID=40A , RG = 10 |
| Source-Drain Diode Forward Voltage | VSD | - | - | 1.5 | V | IS = 55A, VGS = 0V |
Note 1: EAS is tested at starting Tj = 25, VDD=75V,VGS = 10V,L = 10mH, Rg=25m.
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