High Current Power MOSFET Slkor SL100N03D with TO252 DPAK Package and Enhanced Switching Performance

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Product Description

Product Overview

This Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, enhance switching performance, and provide superior avalanche and commutation mode energy handling. It is designed for applications requiring low on-resistance, fast switching, and high dv/dt capability.

Product Attributes

Brand: SLKORMicro
Model: SL100N03D
Package: TO-252 DPAK

Technical Specifications

Parameter	Symbol	Value	Unit	Test Condition	Min.	Typ.	Max.
Absolute Maximum Ratings
Drain-source Voltage	VDS	30	V
Gate-source Voltage	VGS	±20	V
Continuous Drain Current	ID	100	A	TC=25
Continuous Drain Current	ID	65	A	TC=100
Pulsed Drain Current	IDM	400	A	TC=25, Tp Limited By Tjmax (note1)
Maximum Power Dissipation	PD	70	W	TC=25
Avalanche energy, single Pulse	EAS	272	mJ	L=0.5mH (note2)
Operating Junction And Storage Temperature	Tj,Tstg	-55 To 150
Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds	TL	300
Thermal Resistance
Junction-to-Case	RθJC		/W			1.78
Electrical Characteristic (TC=25 unless otherwise noted)
Off Characteristic
Drain-source breakdown voltage	BVDSS	30	V	VGS=0V, ID=250µA
Zero gate voltage drain current	IDSS		µA	VDS=30V, VGS=0V			1
Gate-source leakage current	IGSS		nA	VGS=±20V, VDS=0V			±100
On Characteristics
Gate threshold voltage	VGS(th)	1.0	V	VDS=VGS, ID=250µA	1.0		2.2
Drain-source on-state resistance	RDS(on)	3.2	mΩ	VGS=10V, ID=20A		3.2	4.0
Drain-source on-state resistance	RDS(on)	5.3	mΩ	VGS=4.5V, ID=15A		5.3	7.0
Dynamic Characteristic
Input Capacitance	Ciss		PF	VGS=0V, VDS=15V, f=1.0MHz		3270
Output Capacitance	Coss		PF	VGS=0V, VDS=15V, f=1.0MHz		358
Reverse Transfer Capacitance	Crss		PF	VGS=0V, VDS=15V, f=1.0MHz		315
Switching Characteristics
Turn-on delay time	td(on)		nS	VDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=25		12
Turn-on Rise time	tr		nS	VDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=25		110
Turn-off delay time	td(off)		nS	VDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=25		56
Turn-off Fall time	tf		nS	VDS=10V, ID=30A, VGS=10V RL=3Ω, Tj=25		100
Gate Total Charge	QG		nC	VGS=10V, VDS=10V, ID=30A		62
Gate-Source Charge	QgS		nC	VGS=10V, VDS=10V, ID=30A		30
Gate-Drain Charge	Qgd		nC	VGS=10V, VDS=10V, ID=30A		3.2
Drain-Source Diode Characteristics
Body Diode Forward Voltage	VSD		V	VGS=0V, ISD=20ATJ=25			1.2
Body Diode Forward Current	Is		A				100
Body Diode Reverse Recovery Time	Trr		ns	TJ=25, ISD=20A, VGS=0V, di/dt =100A/μs		20
Body Diode Reverse Recovery Charge	Qrr		nC	TJ=25, ISD=20A, VGS=0V, di/dt =100A/μs		10