Fast Switching 60V P Channel MOSFET Siliup SP60P60TH Featuring Low Gate Charge and RDSon

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Product Description

Product Overview

The SP60P60TH is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. This device is designed for fast switching applications and features low gate charge and low R_DS(on). It is 100% tested for single pulse avalanche energy. Key applications include DC-DC converters and load switching.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: SP60P60TH
Package: TO-252

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				-60	V
Static Drain-Source On-Resistance	R_DS(on)	@-10V		60		m
Static Drain-Source On-Resistance	R_DS(on)	@-4.5V		75		m
Continuous Drain Current	ID				-14	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)			-60	V
Gate-Source Voltage	VGS	(Ta=25)			20	V
Continuous Drain Current	ID	(TC=25)			-14	A
Continuous Drain Current	ID	(TC=100)			-9.3	A
Pulsed Drain Current	IDM	(Ta=25)			-64	A
Single Pulse Avalanche Energy	EAS	(Ta=25)			80	mJ
Power Dissipation	PD	(TC=25)			32	W
Thermal Resistance Junction-to-Case	RJC	(Ta=25)			3.9	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250uA	-60			V
Drain-Source Leakage Current	IDSS	VDS=-48V , VGS=0V , TJ=25			-1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V			100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =-250uA	-1.0	-2.0	-3.0	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID=-8A		60	80	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID=-8A		75	110	m
Input Capacitance	Ciss	VDS=-30V , VGS=0V , f=1MHz		1090		pF
Output Capacitance	Coss	VDS=-30V , VGS=0V , f=1MHz		77		pF
Reverse Transfer Capacitance	Crss	VDS=-30V , VGS=0V , f=1MHz		58		pF
Total Gate Charge	Qg	VDS=-30V , VGS=-10V , ID=-6A		23		nC
Gate-Source Charge	Qgs	VDS=-30V , VGS=-10V , ID=-6A		4.2		nC
Gate-Drain Charge	Qg	VDS=-30V , VGS=-10V , ID=-6A		4.8		nC
Turn-On Delay Time	Td(on)	VDD=-30V, VGS=-10V ,RG=3,ID=-10A		9.8		nS
Rise Time	Tr	VDD=-30V, VGS=-10V ,RG=3,ID=-10A		6.1		nS
Turn-Off Delay Time	Td(off)	VDD=-30V, VGS=-10V ,RG=3,ID=-10A		44		nS
Fall Time	Tf	VDD=-30V, VGS=-10V ,RG=3,ID=-10A		12.7		nS
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25			1.2	V
Maximum Body-Diode Continuous Current	IS				-14	A
Reverse Recovery Time	Trr	IS=-8A, di/dt=100A/us, TJ=25		25		nS
Reverse Recovery Charge	Qrr	IS=-8A, di/dt=100A/us, TJ=25		31		nC

Package Information (TO-252)

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.400	0.087	0.094
A1	0.000	0.127	0.000	0.005
b	0.660	0.860	0.026	0.034
c	0.460	0.580	0.018	0.023
D	6.500	6.700	0.256	0.264
D1	5.100	5.460	0.201	0.215
D2	4.830	REF.	0.190	REF.
E	6.000	6.200	0.236	0.244
e	2.186	2.386	0.086	0.094
L	9.800	10.400	0.386	0.409
L1	2.900	REF.	0.114	REF.
L2	1.400	1.700	0.055	0.067
L3	1.600	REF.	0.063	REF.
L4	0.600	1.000	0.024	0.039
	1.100	1.300	0.043	0.051
	0	8	0	8
h	0.000	0.300	0.000	0.012
V	5.350	REF.	0.211	REF.