Power MOSFET Slkor SL05N06Z offering fast switching and low reverse transfer capacitance performance

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Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

This product is a high-performance MOSFET designed for power switching applications. It features excellent heat dissipation, ultra-low gate charge, low reverse transfer capacitance, and fast switching capability, along with specified avalanche energy. It is ideal for power switching applications.

Product Attributes

Brand: SLKormicro
Device Code: 05N06Z
Marking: XX 05N06Z
Package: SOT-89

Technical Specifications

Parameter	Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings
VDS				60	V
VGS				±20	V
TJ				150	±C
TSTG		-55	to	150	±C
IS	Tc=25±C			5	A
IDM	Tc=25±C			20	A
ID	Tc=25±C			5	A
PD	Tc=25±C			0.5	W
RθJA	Junction-Ambient((*1 in2 Pad of 2-oz Copper), Max.)			200	±C/W
Electrical Characteristics
BV(BR)DSS	Drain-Source Breakdown Voltage, VGS=0V, ID=250μA	60	--	--	V
IDSS	Zero Gate Voltage Drain Current, VDS=60V, VGS=0V	--	--	1	uA
IGSS	Gate-Body Leakage Current, VGS=±20V, VDS=0V	--	--	±100	nA
VGS(th)	Gate Threshold Voltage, VDS=VGS, ID=250μA	1.1	1.7	2.5	V
RDS(on)	Drain-Source On-State Resistance, VGS=10V, ID=3A	--	58	100	mΩ
RDS(on)	Drain-Source On-State Resistance, VGS=4.5V, ID=2A	--	70	150	mΩ
VSD	Forward on voltage, Tj=25±C, Is=3A	--	0.8	1.2	V
Dynamic Electrical Characteristics
CISS	Input Capacitance, VDS=30V, VGS=0V, f=1MHz	--	400	--	pF
COSS	Output Capacitance, VDS=30V, VGS=0V, f=1MHz	--	28	--	pF
CRSS	Reverse Transfer Capacitance, VDS=30V, VGS=0V, f=1MHz	--	23	--	pF
Qg	Total Gate Charge, VDD=30V, ID=3A, VGS=10V, RG=2.3Ω	--	9	--	nC
Qgs	Gate Source Charge	--	1	--	nC
Qgd	Gate Drain Charge	--	2.5	--	nC
td(on)	Turn-on Delay Time	--	4	--	nS
tr	Turn-on Rise Time	--	10	--	nS
td(off)	Turn-Off Delay Time	--	12.5	--	nS
tf	Turn-Off Fall Time	--	1.8	--	nS