Industrial power MOSFET Slkor SL4410 with 20 amp continuous current and 30 volt drain source voltage

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Product Description

Product Overview

The SL4410 is a high-performance N-Channel Enhancement Mode MOSFET designed for power management applications. It offers a 30V/20A rating with low on-resistance (RDS(ON) = 5.9m max. @ VGS=10V, 7.9m max. @ VGS=4.5V). This device is 100% UIS + Rg Tested, ensuring reliability and ruggedness. Available in Lead Free and Green (RoHS Compliant) versions.

Product Attributes

Brand: SLKOR Micro
Certifications: RoHS Compliant (Lead Free and Green Devices Available)

Technical Specifications

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Unit
VDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250A	30	-	-	V
ID	Continuous Drain Current (VGS=10V)	TA=25C	-	-	20	A
ID	Continuous Drain Current (VGS=10V)	TA=70C	-	-	15.8	A
IDM	Pulsed Drain Current (VGS=10V)	300s	-	-	80	A
IS	Diode Continuous Forward Current	-	-	-	5	A
IAS	Avalanche Current (Single Pulse)	-	-	-	25	A
EAS	Single Pulse Avalanche Energy (L=0.1mH)	-	-	-	31	mJ
TJ	Maximum Junction Temperature	-	-	-	150	C
TSTG	Storage Temperature Range	-	-55	-	150	C
PD	Maximum Power Dissipation	TA=25C	-	-	4.2	W
PD	Maximum Power Dissipation	TA=70C	-	-	2.6	W
RJA	Thermal Resistance-Junction to Ambient	Steady State, t 10s	-	30	65	C/W
RJL	Thermal Resistance-Junction to Lead	Steady State	-	20	-	C/W
BVDSS	Drain-Source Breakdown Voltage	VGS=0V, IDS=250A	30	-	-	V
IDSS	Zero Gate Voltage Drain Current	VDS=24V, VGS=0V	-	-	1	A
IDSS	Zero Gate Voltage Drain Current	TJ=85C	-	-	30	A
VGS(th)	Gate Threshold Voltage	VDS=VGS, IDS=250A	1.3	1.8	2.5	V
IGSS	Gate Leakage Current	VGS=20V, VDS=0V	-	-	100	nA
RDS(ON)	Drain-Source On-state Resistance	VGS=10V, IDS=20A	-	4.5	5.9	m
RDS(ON)	Drain-Source On-state Resistance	VGS=4.5V, IDS=14A	-	6.1	7.9	m
VSD	Diode Forward Voltage	ISD=5A, VGS=0V	-	0.8	1.1	V
trr	Reverse Recovery Time	ISD=20A, dlSD/dt=100A/s	-	10	-	ns
Qrr	Reverse Recovery Charge	-	-	3	-	nC
RG	Gate Resistance	VGS=0V,VDS=0V,F=1MHz	-	2.4	-
Ciss	Input Capacitance	VGS=0V, VDS=15V, Frequency=1.0MHz	-	1700	-	pF
Coss	Output Capacitance	-	-	265	-	pF
Crss	Reverse Transfer Capacitance	-	-	165	-	pF
td(ON)	Turn-on Delay Time	VDD=15V, RL=15, IDS=1A, VGEN=10V, RG=6	-	14	26	ns
tr	Turn-on Rise Time	-	-	10	19	ns
td(OFF)	Turn-off Delay Time	-	-	44	80	ns
tf	Turn-off Fall Time	-	-	12	23	ns
Qg	Total Gate Charge	VDS=15V, VGS=10V, IDS=20A	-	28.3	39.6	nC
Qg	Total Gate Charge	VDS=15V, VGS=4.5V, IDS=20A	-	12.9	-	nC
Qgs	Gate-Source Charge	-	-	4.22	-	nC
Qgd	Gate-Drain Charge	-	-	7.3	-	nC