Siliup SP40N08DNK 40V Dual N Channel MOSFET with PDFN5X6 8L Package and Halogen Free ROHS Compliant Design
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Product Description
Product Overview
The SP40N08DNK is a 40V Dual N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, a surface mount package, and is ROHS Compliant & Halogen-Free. This MOSFET is 100% single pulse avalanche energy tested and is suitable for applications such as DC-DC Converters and Motor Control.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N08DNK
- Package Type: PDFN5X6-8L
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 8.5 | 11 | m | |
| RDS(on)TYP | RDS(on) | @4.5V | 11 | 15 | m | |
| ID | ID | 45 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | (Tc=25C) | 45 | A | ||
| Continuous Drain Current (Tc=100C) | ID | (Tc=100C) | 30 | A | ||
| Pulse Drain Current Tested | IDM | 180 | A | |||
| Single pulsed avalanche energy | EAS | 51 | mJ | |||
| Power Dissipation (Tc=25C) | PD | (Tc=25C) | 35 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.6 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =12A | - | 8.5 | 11 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =6A | - | 11 | 15 | m |
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 1785 | - | pF |
| Output Capacitance | Coss | - | 210 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 158 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=10A | - | 31 | - | nC |
| Gate-Source Charge | Qgs | - | 4 | - | nC | |
| Gate-Drain Charge | Qg d | - | 11 | - | nC | |
| Turn-On Delay Time | Td(on) | VDD=20V ,VGS=10V , RG=3, ID=10A | - | 6 | - | nS |
| Rise Time | Tr | - | 16 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 31 | - | nS | |
| Fall Time | Tf | - | 15 | - | nS | |
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 45 | A | |
| Reverse recover time | Trr | IS=10A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse recovery charge | Qrr | - | 23 | - | nC | |
| PDFN5X6-8L Package Information | |||||
|---|---|---|---|---|---|
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Note | ||
| Min. | Max. | Min. | Max. | ||
| A | 0.900 | 1.000 | 0.035 | 0.039 | |
| A3 | 0.254 | 0.010 | REF. | REF. | |
| D | 4.944 | 5.096 | 0.195 | 0.201 | |
| E | 5.974 | 6.126 | 0.235 | 0.241 | |
| D1 | 1.470 | 1.870 | 0.058 | 0.074 | |
| D2 | 0.470 | 0.870 | 0.019 | 0.034 | |
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | |
| D3 | 4.824 | 4.976 | 0.190 | 0.196 | |
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | |
| k | 1.190 | 1.390 | 0.047 | 0.055 | |
| b | 0.350 | 0.450 | 0.014 | 0.018 | |
| e | 1.270 | TYP. | 0.050 | TYP. | TYP. |
| L | 0.559 | 0.711 | 0.022 | 0.028 | |
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | |
| H | 0.574 | 0.726 | 0.023 | 0.029 | |
| 10 | 12 | 10 | 12 | ||
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