SOT 23 3L Package P Channel MOSFET Siliup SP3401AT1 30V Device for Battery Switch and DC DC Converter
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP3401AT1 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is suitable for applications such as battery switches and DC/DC converters. It features a SOT-23-3L package for efficient integration into electronic circuits.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Type: P-Channel MOSFET
- Package: SOT-23-3L
- Device Code: 3401A
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | @-10V | 41 | m | |||
| RDS(on) | @-4.5V | 49 | m | |||
| RDS(on) | @-2.5V | 70 | m | |||
| Continuous Drain Current | ID | -5.5 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -30 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -5.5 | A | |||
| Pulse Drain Current | IDM | Tested | -22 | A | ||
| Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 96 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -30 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.6 | -0.9 | -1.3 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID =-4.2A | 41 | 55 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID =-4A | 49 | 65 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID =-2A | 70 | 85 | m | |
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | 880 | pF | ||
| Output Capacitance | Coss | 105 | pF | |||
| Reverse Transfer Capacitance | Crss | 60 | pF | |||
| Total Gate Charge | Qg | VDS=-15V , VGS=-4.5V , ID=-4.2A | 8.5 | nC | ||
| Gate-Source Charge | Qgs | 1.8 | ||||
| Gate-Drain Charge | Qgd | 2.7 | ||||
| Turn-On Delay Time | td(on) | VDD=-15V VGS=-10V , RG=6 , ID=-4.2A | 6.3 | nS | ||
| Turn-On Rise Time | tr | 3.2 | ||||
| Turn-Off Delay Time | td(off) | 38.2 | ||||
| Turn-Off Fall Time | tf | 12 | ||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Package Information (SOT-23-3L) | ||||||
| Symbol | Dimensions in millimeters | Min. | Max. | Typ. | ||
| A | 1.050 | 1.250 | ||||
| A1 | 0.000 | 0.100 | ||||
| A2 | 1.050 | 1.150 | ||||
| b | 0.300 | 0.500 | ||||
| c | 0.100 | 0.200 | ||||
| D | 2.820 | 3.020 | ||||
| E | 1.500 | 1.700 | ||||
| E1 | 2.650 | 2.950 | ||||
| e | 0.950 | |||||
| e1 | 1.800 | 2.000 | ||||
| L | 0.300 | 0.600 | ||||
| 0 | 8 | |||||
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