Power MOSFET SLkor SLP240C03D featuring complementary N Channel P Channel with low RDS ON and surface mount package

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Product Description

Product Overview

The SLP240C03D is a complementary N-Channel and P-Channel MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for applications such as level-shifted high-side switches and various other power management tasks. Key features include high power and current handling capability, a lead-free acquisition, and a surface-mount package.

Product Attributes

Brand: SLKORMicro
Certifications: Lead-free product acquired

Technical Specifications

Parameter	Symbol	N-Channel Condition	Min	Typ	Max	Unit	P-Channel Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings	VDS		30			V		-30			V
	VGS				±20	V				±20	V
	ID (TA=25)			8.5		A			-7.0		A
Electrical Characteristics (TA=25)	BVDSS	VGS=0V, ID=250µA	30			V	VGS=0V, ID=-250µA	-30			V
Electrical Characteristics (TA=25)	VGS(th)	VDS=VGS, ID=250µA	1.2	1.6	2.4	V	VDS=VGS, ID=-250µA	-1.0	-1.3	-2.0	V
On Characteristics (Note 3)	RDS(ON)	VGS=10V, ID=8.5A		19	21	mΩ	VGS=-10V, ID=-7.0A		45	55	mΩ
On Characteristics (Note 3)	RDS(ON)	VGS=4.5V, ID=5.0A		29	32	mΩ	VGS=-4.5V, ID=-5.0A		42	60	mΩ
Dynamic Characteristics (Note4)	Clss			398		PF		930		PF
	Coss			67		PF		121		PF
	Crss	VDS=15V, VGS=0V, F=1.0MHz		61		PF	VDS=-15V, VGS=0V, F=1.0MHz		102		PF
Switching Characteristics (Note 4)	td(on)			8.0		nS		9.5		nS
	tr			11.5		nS		5.4		nS
	td(off)			17		nS		42.5		nS
	tf			7.5		nS		13.6		nS
Total Gate Charge	Qg			7.5		nC		20		nC
	Qgs			1.7		nC		4.1		nC
	Qgd	VDS=10V, ID=1.0A, VGS=10V		1.3		nC	VDS=-15V, ID=-3.0A, VGS=-10V		2.6		nC
Drain-Source Diode Characteristics	VSD	VGS=0V, IS=2A		0.75	1.0	V	VGS=0V, IS=-2.0A		0.75	1.0	V