Siliup BSS84KW 60V P Channel MOSFET with Low Static Drain Source On Resistance and 2KV ESD Protection
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The BSS84KW is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this device features a surface mount package and ESD protection up to 2KV. It is ideal for applications such as battery switches and DC/DC converters.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: BSS84KW
- Package Type: SOT-323
- Marking Code: B84K
- ESD Protection: 2KV
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | @-10V | 4.2 | 6 | ||
| Static Drain-Source On-Resistance | RDS(on) | @-4.5V | 4.5 | 7 | ||
| Continuous Drain Current | ID | -130 | mA | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -60 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current | ID | -130 | mA | |||
| Pulse Drain Current | IDM | Tested | -520 | mA | ||
| Power Dissipation | PD | 300 | mW | |||
| Thermal Resistance Junction-to-Ambient | RJA | 416 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V, VGS=0V | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | 10 | uA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.8 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-10V, ID =-150mA | 4.2 | 6 | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS =-4.5V, ID =-150mA | 4.5 | 7 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-5V, VGS=0V, f=1MHz | 30 | pF | ||
| Output Capacitance | Coss | 10 | pF | |||
| Reverse Transfer Capacitance | Crss | 5 | pF | |||
| Total Gate Charge | Qg | VDS=-30V, VGS=-10V, ID=-0.15A | 1.8 | nC | ||
| Gate-Source Charge | Qgs | 0.5 | ||||
| Gate-Drain Charge | Qg d | 0.18 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-15V, VGS=-10V, RG=50, ID=-0.15A | 8.6 | nS | ||
| Turn-On Rise Time | tr | 20 | ||||
| Turn-Off Delay Time | td(off) | 14 | ||||
| Turn-Off Fall Time | tf | 77 | ||||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | -1.2 | V | ||
| Package Information (SOT-323) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.00 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.10 | 0.15 | ||||
| D | 2.00 | 2.20 | ||||
| E | 1.15 | 1.35 | ||||
| E1 | 2.15 | 2.40 | ||||
| e | 0.65 (Typ.) | |||||
| e1 | 1.20 | 1.40 | ||||
| L | 0.525 (Ref.) | |||||
| L1 | 0.26 | 0.46 | ||||
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