Surface Mount P Channel MOSFET Slkor SL2P03F with Lead Free Certification and High Current Handling

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SL2P03F is a P-Channel Enhancement Mode Power MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and is suitable for load switch and PWM applications. Key features include a VDS of -30V, ID of -2.0A, and RDS(ON) as low as 72m @ VGS=-10V. It boasts high power and current handling capability and is available in a lead-free, surface-mount package.

Product Attributes

Brand: SLKORMicro
Product Type: P-Channel Enhancement Mode Power MOSFET
Package: SOT-23 (Surface Mount)
Certifications: Lead-free product acquired

Technical Specifications

Parameter	Symbol	Condition	Min	Typ	Max	Unit
General Features
Drain-Source Voltage	VDS				-30	V
Gate-Source Voltage	VGS				±20	V
Drain Current-Continuous	ID				-2.0	A
Drain Current-Pulsed	IDM	(Note 1)			-10	A
Maximum Power Dissipation	PD				1.0	W
Operating Junction and Storage Temperature Range	TJ,TSTG		-55	To	150
Thermal Resistance, Junction-to-Ambient	RθJA	(Note 2)		125		/W
Off Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=-250μA	-30	-33	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=-30V,VGS=0V	-	-	-1	μA
Gate-Body Leakage Current	IGSS	VGS=±20V,VDS=0V	-	-	±100	nA
On Characteristics (Note 3)
Gate Threshold Voltage	VGS(th)	VDS=VGS,ID=-250μA	-1	-1.6	-2.5	V
Drain-Source On-State Resistance	RDS(ON)	VGS=-10V, ID=-2.0A	-	72	130	mΩ
Drain-Source On-State Resistance	RDS(ON)	VGS=-4.5V, ID=-1.5A	-	110	180	mΩ
Forward Transconductance	gFS	VDS=-10V,ID=-2A	2	-	-	S
Dynamic Characteristics (Note4)
Input Capacitance	Clss		-	226	-	PF
Output Capacitance	Coss		-	47	-	PF
Reverse Transfer Capacitance	Crss	VDS=-15V,VGS=0V, F=1.0MHz	-	28	-	PF
Switching Characteristics (Note 4)
Turn-on Delay Time	td(on)		-	9	-	nS
Turn-on Rise Time	tr		-	9	-	nS
Turn-Off Delay Time	td(off)		-	18	-	nS
Turn-Off Fall Time	tf	VDD=-15V,RL=15Ω, VGS=-10V,RGEN=6Ω	-	6	-	nS
Total Gate Charge
Total Gate Charge	Qg	VDS=-15V,ID=-2.0A,VGS=-10V	-	8.5	-	nC
Gate-Source Charge	Qgs		-	2.3	-	nC
Gate-Drain Charge	Qgd		-	1.5	-	nC
Drain-Source Diode Characteristics
Diode Forward Voltage	VSD	VGS=0V,IS=-2.0A (Note 3)	-	-	-1.2	V