Slkor FDN335N SL 20V N Channel MOSFET Featuring Low Drain Source Resistance and High Current Rating
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Delivery Time:
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Product Description
Product Overview
The FDN335N-SL is a 20V N-Channel MOSFET designed with a high-density cell structure for extremely low RDS(on) and exceptional DC current capability. This device is Pb-Free and Halogen Free, making it suitable for various applications including DC-DC converters and load switches.
Product Attributes
- Device Code: 335
- Marking: 335
- Pb-Free: Yes
- Halogen Free: Yes
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=250A | 20 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=16VVGS=0V | -- | -- | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=8VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250A | 0.4 | 0.9 | 1.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5V, ID =1.7 A | -- | 0.055 | 0.07 | |
| Drain-Source On-State Resistance | RDS(on) | VGS=2.5V, ID=1.5 A | -- | 0.078 | 0.1 | |
| Input Capacitance | CISS | VDS=10VID=1.7A VGS=4.5VRGEN=6, f=1MHz | -- | 310 | -- | pF |
| Output Capacitance | COSS | VDS=10VID=1.7A VGS=4.5VRGEN=6, f=1MHz | -- | 80 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=10VID=1.7A VGS=4.5VRGEN=6, f=1MHz | -- | 40 | -- | pF |
| Total Gate Charge | Qg | VDD=10VID=1.7A VGS=4.5VRGEN=6 | -- | 3.5 | 5 | nC |
| Gate Source Charge | Qgs | VDD=10VID=1.7A VGS=4.5VRGEN=6 | -- | 0.55 | -- | nC |
| Gate Drain Charge | Qgd | VDD=10VID=1.7A VGS=4.5VRGEN=6 | -- | 0.95 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=10VID=1.7A VGS=4.5VRGEN=6 | -- | 5 | 15 | nS |
| Turn-on Rise Time | tr | VDD=10VID=1.7A VGS=4.5VRGEN=6 | -- | 8.5 | 17 | nS |
| Turn-Off Delay Time | td(off) | VDD=10VID=1.7A VGS=4.5VRGEN=6 | -- | 11 | 20 | nS |
| Turn-Off Fall Time | tf | VDD=10VID=1.7A VGS=4.5VRGEN=6 | -- | 3 | 10 | nS |
| Forward on voltage | VSD | VGS=0V, IS=0.17A | -- | -- | 1.2 | V |
| Drain-Source Current | ID | Tc=25C | -- | -- | 1.7 | A |
| Pulse Drain Current | IDM | Tc=25C | -- | -- | 8 | A |
| Diode Continuous Forward Current | IS | Tc=25C | -- | -- | 1.7 | A |
| Maximum Power Dissipation | PD | Tc=25C, Mounted on Large Heat Sink | -- | 0.5 | -- | W |
| Thermal Resistance Junction-Ambient | RJA | Mounted on Large Heat Sink | -- | 250 | -- | C/W |
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=250A | 20 | -- | -- | V |
| Maximum Junction Temperature | TJ | -- | -- | 150 | -- | C |
| Storage Temperature Range | TSTG | -- | -50 | -- | 155 | C |
| Gate-Source Voltage | VGS | -- | -- | 12 | -- | V |
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Sellina