Low On Resistance P Channel MOSFET 16V Siliup SP16P03NJ Suitable for Power Management and Conversion
Price:
Negotiable
MOQ:
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Delivery Time:
Negotiable
Product Description
Product Overview
The SP16P03NJ is a 16V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low On-Resistance, and 100% single pulse avalanche energy testing. This MOSFET is ideal for applications such as DC-DC converters and power management systems.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP16P03NJ
- Technology: P-Channel MOSFET
- Package: PDFN3X3-8L
- Origin: China (implied by www.siliup.com and company name)
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -16 | V | |||
| RDS(on) | -4.5V | 3.4 | m | |||
| RDS(on) | -2.5V | 4.5 | m | |||
| Continuous Drain Current | ID | -74 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -16 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | (Tc=25C) | -74 | A | ||
| Continuous Drain Current | ID | (Tc=100C) | -49 | A | ||
| Pulse Drain Current | IDM | Tested | -296 | A | ||
| Single Pulse Avalanche Energy | EAS | 1 | 81 | mJ | ||
| Power Dissipation | PD | (Tc=25C) | 42 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 4.9 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250uA | -16 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-12V, VGS=0V, TJ=25 | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID =-250uA | -0.5 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-20A | - | 3.4 | 4.2 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V, ID=-20A | - | 4.5 | 6 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-10V, VGS=0V, f=1MHz | - | 5434 | - | pF |
| Output Capacitance | Coss | - | 967 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 876 | - | pF | |
| Total Gate Charge | Qg | VDS=-10V, VGS=-4.5V, ID=-20A | - | 60 | - | nC |
| Gate-Source Charge | Qgs | - | 7 | - | nC | |
| Gate-Drain Charge | Qgd | - | 19 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-10V, VGS=-4.5V, RG=3, ID=-20A | - | 16 | - | nS |
| Rise Time | Tr | - | 21 | - | ||
| Turn-Off Delay Time | Td(off) | - | 68 | - | ||
| Fall Time | Tf | - | 52 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V, IS=-1A, TJ=25 | - | - | -1.2 | V |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 | REF. | 0.006 | REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
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