Power MOSFET Siliup SP011N03AGHTO N Channel 110V 240A Low RDS on for PWM and High Frequency Circuits
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Product Description
Product Overview
The SP011N03AGHTO is an 110V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Featuring advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is designed for applications such as PWM, hard switched, and high-frequency circuits, as well as power management. It is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP011N03AGHTO
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
- Package: TOLL
- Origin: China (implied by company website and typical datasheet origin)
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | V(BR)DSS | 110 | V | |
| RDS(on) Typ | RDS(on)TYP | @10V | 2.7 | m |
| Continuous Drain Current | ID | 240 | A | |
| Absolute Maximum Ratings | ||||
| Drain-Source Voltage | VDS | (Ta=25, unless otherwise noted) | 110 | V |
| Gate-Source Voltage | VGS | (Ta=25, unless otherwise noted) | 20 | V |
| Continuous Drain Current (Tc=25) | ID | (Ta=25, unless otherwise noted) | 240 | A |
| Continuous Drain Current (Tc=100) | ID | (Ta=25, unless otherwise noted) | 160 | A |
| Pulsed Drain Current | IDM | (Ta=25, unless otherwise noted) | 960 | A |
| Single Pulse Avalanche Energy | EAS | (Ta=25, unless otherwise noted) | 744 | mJ |
| Power Dissipation (Tc=25) | PD | (Ta=25, unless otherwise noted) | 260 | W |
| Thermal Resistance Junction-to-Case | RJC | (Ta=25, unless otherwise noted) | 0.48 | /W |
| Storage Temperature Range | TSTG | (Ta=25, unless otherwise noted) | -55 to 150 | |
| Operating Junction Temperature Range | TJ | (Ta=25, unless otherwise noted) | -55 to 150 | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 110 - 120 | V |
| Drain Cut-Off Current | IDSS | VDS = 80V, VGS = 0V | - - 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - - 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2.0 3.0 4.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 30A | - 2.7 3.5 | m |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | VDS =50V, VGS = 0V, f = 1.0MHz | - 7162 - | pF |
| Output Capacitance | Coss | - 1067 - | pF | |
| Reverse Transfer Capacitance | Crss | - 35 - | pF | |
| Switching Characteristics | ||||
| Total Gate Charge | Qg | VDS=50V , VGS=10V , ID=100A | - 105 - | nC |
| Gate-Source Charge | Qgs | - 47 - | ||
| Gate-Drain Charge | Qgd | - 23 - | ||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS =50V, ID=100A RG = 6 | - 26 - | nS |
| Rise Time | tr | - 75 - | ||
| Turn-Off Delay Time | td(off) | - 87 - | ||
| Fall Time | tf | - 30 - | ||
| Drain-Source Body Diode Characteristics | ||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - - 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - - 240 | A | |
| Body Diode Reverse Recovery Time | Trr | IS=100A, di/dt=100A/us, TJ=25 | - 72 - | nS |
| Body Diode Reverse Recovery Charge | Qrr | - 180 - | nC | |
| Package Information (TOLL) | ||||
| Dimension | Symbol | Min. | Nom. | Max. |
| A | 2.20 | 2.30 | 2.40 | |
| b | 0.65 | 0.75 | 0.85 | |
| C | 0.508 | REF | ||
| D | 10.25 | 10.40 | 10.55 | |
| D1 | 2.85 | 3.00 | 3.15 | |
| E | 9.75 | 9.90 | 10.05 | |
| E1 | 9.65 | 9.80 | 9.95 | |
| E2 | 8.95 | 9.10 | 9.25 | |
| E3 | 7.25 | 7.40 | 7.55 | |
| e | 1.20 | BSC | ||
| F | 1.05 | 1.20 | 1.35 | |
| H | 11.55 | 11.70 | 11.85 | |
| H1 | 6.03 | 6.18 | 6.33 | |
| H2 | 6.85 | 7.00 | 7.15 | |
| H3 | 3.00 | BSC | ||
| L | 1.55 | 1.70 | 1.85 | |
| L1 | 0.55 | 0.7 | 0.85 | |
| L2 | 0.45 | 0.6 | 0.75 | |
| M | 0.08 | REF. | ||
| 8 | 10 | 12 | ||
| K | 4.25 | 4.40 | 4.55 | |
Order Information:
| Device | Package | Unit/Tape |
|---|---|---|
| SP011N03AGHTO | TOLL | 2000 |
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