Low On Resistance 30V N Channel MOSFET Siliup SP30N03BNJ Suitable for Power Management and Conversion
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Product Description
Product Overview
The SP30N03BNJ is a 30V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching speed, low on-resistance with typical values of 3.5m at 10V and 6m at 4.5V, and is 100% tested for single pulse avalanche energy. This MOSFET is designed for applications such as DC-DC converters and power management.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: SP30N03BNJ
- Package: PDFN3X3-8L
- Technology: N-Channel MOSFET
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| On-Resistance | RDS(on)TYP | @10V | 3.5 | m | ||
| On-Resistance | RDS(on)TYP | @4.5V | 6 | m | ||
| Continuous Drain Current | ID | 60 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25,unless otherwise noted) | 30 | V | ||
| Gate-Source Voltage | VGSS | (Ta=25,unless otherwise noted) | 20 | V | ||
| Continuous Drain Current | ID | (Tc=25C) | 60 | A | ||
| Pulse Drain Current Tested | IDM | 240 | A | |||
| Single Pulse Avalanche Energy | EAS | 225 | mJ | |||
| Power Dissipation | PD | (Tc=25C) | 40 | W | ||
| Thermal Resistance Junction-to-Case | RJC | 3.1 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | 33.5 | - | V |
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | - | 3.5 | 4.5 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=15A | - | 6 | 8 | m |
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | - | 2010 | - | pF |
| Output Capacitance | Coss | - | 250 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 230 | - | pF | |
| Total Gate Charge | Qg | VDS=15V , VGS=10V , ID=45A | - | 60 | - | nC |
| Gate-Source Charge | Qgs | - | 8.2 | - | ||
| Gate-Drain Charge | Qg | - | 7.4 | - | ||
| Turn-On Delay Time | Td(on) | VDD=15V, VGS=10V , RG=3, ID=20A | - | 12 | - | nS |
| Rise Time | Tr | - | 15 | - | ||
| Turn-Off Delay Time | Td(off) | - | 40 | - | nS | |
| Fall Time | Tf | - | 14 | - | ||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Diode Continuous Current | IS | - | - | 60 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 47 | - | nS |
| Reverse recovery charge | Qrr | - | 45 | - | nC | |
| Package Information (PDFN3X3-8L) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 | 0.850 | 0.026 | 0.033 | ||
| A1 | 0.152 | REF. | 0.006 | REF. | ||
| A2 | 0~0.05 | 0~0.002 | ||||
| D | 2.900 | 3.100 | 0.114 | 0.122 | ||
| D1 | 2.300 | 2.600 | 0.091 | 0.102 | ||
| E | 2.900 | 3.100 | 0.114 | 0.122 | ||
| E1 | 3.150 | 3.450 | 0.124 | 0.136 | ||
| E2 | 1.535 | 1.935 | 0.060 | 0.076 | ||
| b | 0.200 | 0.400 | 0.008 | 0.016 | ||
| e | 0.550 | 0.750 | 0.022 | 0.030 | ||
| L | 0.300 | 0.500 | 0.012 | 0.020 | ||
| L1 | 0.180 | 0.480 | 0.007 | 0.019 | ||
| L2 | 0~0.100 | 0~0.004 | ||||
| L3 | 0~0.100 | 0~0.004 | ||||
| H | 0.315 | 0.515 | 0.012 | 0.020 | ||
| 9 | 13 | 9 | 13 | |||
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