40V N Channel MOSFET Siliup SP40N03TH with Low Gate Charge and Single Pulse Avalanche Energy Testing

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Product Description

Product Overview

The SP40N03TH is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on) for efficient operation. This MOSFET is designed for applications such as DC-DC converters and load switching, with 100% single pulse avalanche energy testing for reliability.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: SP40N03TH
Package: TO-252

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	40	-	-	V
Drain-Source Leakage Current	IDSS	VDS=32V , VGS=0V , TJ=25	-	-	1	uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	1.0	1.5	2.5	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=20A	-	3.5	4.5	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=4.5V , ID=15A	-	4.5	6.5	m
Input Capacitance	Ciss	VDS=20V , VGS=0V , f=1MHz	-	5400	-	pF
Output Capacitance	Coss		-	970	-
Reverse Transfer Capacitance	Crss		-	380	-
Total Gate Charge	Qg	VDS=20V , VGS=10V , ID=20A	-	75	-	nC
Gate-Source Charge	Qgs		-	10.5	-
Gate-Drain Charge	Qgd		-	17	-
Turn-On Delay Time	Td(on)	VDD=20V, VGS=10V , RG=3, ID=2A	-	15	-	nS
Rise Time	Tr		-	18	-
Turn-Off Delay Time	Td(off)		-	52	-
Fall Time	Tf		-	23	-
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	120	A
Reverse Recovery Time	Trr	IS=30A, di/dt=100A/us, TJ=25	-	25	-	nS
Reverse Recovery Charge	Qrr		-	16	-	nC
Drain-Source Voltage	VDS	(Ta=25, unless otherwise noted)	-	-	40	V
Gate-Source Voltage	VGS	(Ta=25, unless otherwise noted)	-	-	20	V
Continuous Drain Current	ID	(TC=25)	-	-	120	A
Continuous Drain Current	ID	(TC=100)	-	-	80	A
Pulsed Drain Current	IDM		-	-	480	A
Single Pulse Avalanche Energy	EAS	1	-	-	350	mJ
Power Dissipation	PD	(TC=25)	-	-	120	W
Thermal Resistance Junction-to-Case	RJC		-	1.04	-	/W
Storage Temperature Range	TSTG		-55	-	150
Operating Junction Temperature Range	TJ		-55	-	150

TO-252 Package Information (Dimensions in Millimeters)

Symbol	Dimensions	Min.
A	2.200	2.400
A1	0.000	0.127
b	0.660	0.860
c	0.460	0.580
D	6.500	6.700
D1	5.100	5.460
D2	4.830 REF.
E	6.000	6.200
e	2.186	2.386
L	9.800	10.400
L1	2.900 REF.
L2	1.400	1.700
L3	1.600 REF.
L4	0.600	1.000
	1.100	1.300
	0	8
h	0.000	0.300
V	5.350 REF.