Low On Resistance 30V N Channel MOSFET Siliup SP2304T2J for Power Management Applications
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Product Description
Product Overview
The SP2304T2J is a 30V N-Channel MOSFET designed for efficient power management in various electronic applications. Featuring low on-resistance (RDS(on)) at different gate voltages (37m@10V, 57m@4.5V) and a continuous drain current (ID) of 3.3A, this MOSFET is suitable for DC/DC converters and load switching in portable devices. Its TrenchFET Power MOSFET technology ensures high performance and reliability.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Model: SP2304T2J
- Technology: TrenchFET Power MOSFET
- Channel Type: N-Channel
- Package: SOT-23
- Marking: SP2304T2J
- Version: Ver-1.0
- Date: 2021/01
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 30 | V | |||
| On-Resistance (Typ.) | RDS(on) | @10V | 37 | m | ||
| On-Resistance (Typ.) | RDS(on) | @4.5V | 57 | m | ||
| Continuous Drain Current | ID | 3.3 | A | |||
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 3.3 | A | |||
| Pulsed Drain Current | IDM | 15 | A | |||
| Continuous Source-Drain Diode Current | IS | 0.9 | A | |||
| Maximum Power Dissipation | PD | 0.35 | W | |||
| Thermal Resistance Junction to Ambient (t5s) | RJA | 357 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | ~ | +150 | ||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 30 | V | ||
| Zero gate voltage drain current | IDSS | VDS =30V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 100 | nA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =250A | 1 | 1.6 | 2.2 | V |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =3.2A | 37 | 60 | m | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =2.8A | 57 | 75 | m | |
| Forward transconductance | gFS | VDS =4.5V, ID =2.5A | 2.5 | S | ||
| Dynamic Characteristics | ||||||
| Total gate charge | Qg | VDS =15V,VGS =10V,ID =3.4A | 4.5 | 6.7 | nC | |
| Gate-source charge | Qgs | VDS =15V,VGS =4.5V,ID =3.4A | 2.1 | 3.2 | ||
| Gate-drain charge | Qgd | 0.85 | ||||
| Gate resistance | Rg | f =1.0MHz | 0.8 | |||
| Input Capacitance | Ciss | VDS =15V,VGS =0V,f =1MHz | 235 | pF | ||
| Output Capacitance | Coss | 45 | ||||
| Reverse Transfer Capacitance | Crss | 17 | ||||
| Turn-on delay time | td(on) | VDD=15V, RL=5.6, ID 2.7A, VGEN=4.5V,Rg=1 | 12 | 20 | ns | |
| Turn-on rise time | tr | 50 | 75 | |||
| Turn-off delay time | td(off) | 12 | 20 | |||
| Turn-off fall time | tf | 22 | 35 | |||
| Turn-on delay time | td(on) | VDD=15V, RL=5.6, ID 2.7A, VGEN=10V,Rg=1 | 5 | 10 | ns | |
| Turn-on rise time | tr | 12 | 20 | |||
| Turn-off delay time | td(off) | 10 | 15 | |||
| Turn-off fall time | tf | 5 | 10 | |||
| Source-Drain Diode Characteristics | ||||||
| Continuous source-drain diode current | IS | TC=25 | 1.4 | A | ||
| Pulse diode forward current | ISM | 15 | A | |||
| Body diode voltage | VSD | IS=2.7A,VGS=0V | 1.2 | V | ||
| Package Dimensions (SOT-23) | ||||||
| Symbol | Dimensions In Millimeters | Min. | Max. | |||
| A | 0.90 | 1.15 | ||||
| A1 | 0.00 | 0.10 | ||||
| A2 | 0.90 | 1.05 | ||||
| b | 0.30 | 0.50 | ||||
| c | 0.08 | 0.15 | ||||
| D | 2.80 | 3.00 | ||||
| E | 1.20 | 1.40 | ||||
| E1 | 2.25 | 2.55 | ||||
| e | (REF.) | 0.95 | ||||
| e1 | (REF.) | 1.80 | 2.00 | |||
| L | (REF.) | 0.55 | ||||
| L1 | 0.30 | 0.50 | ||||
| 0 | 8 | |||||
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