N channel MOSFET Slkor SL2314 optimized for low inline power loss and operation in compact surface mount package

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SL2314 is an N-Channel logic enhancement mode power MOSFET manufactured using high cell density advanced trench technology. This technology is optimized for minimal on-state resistance, making it ideal for low voltage applications requiring low in-line power loss in a compact surface mount package. It offers super high design for extremely low RDS(ON) and exceptional on-resistance with maximum DC current capability.

Product Attributes

Brand: SLKORMicro
Certifications: Full RoHS compliance
Package: SOT23-3L

Technical Specifications

Parameter	Condition	Typical Value	Unit	Notes
RDS(ON)	VGS=4.5V, ID=3.0A	25	m
	VGS=2.5V, ID=2.5A	55	m
	VGS=1.8V, ID=2.0A	80	m
Drain-Source Breakdown Voltage (V(BR)DSS)	VGS=0V, ID=250uA	20	V
Gate Threshold Voltage (VGS(th))	VDS=VGS, ID=250uA	0.5 - 1.0	V
Continuous Drain Current (ID)	TC=25, VGS=10V	4.5	A
Continuous Drain Current (ID)	TC=70, VGS=10V	3.0	A
Pulsed Drain Current (IDM)		20	A
Power Dissipation (PD)	TA=25	1.5	W
Power Dissipation (PD)	TA=70	0.9	W
Operation Junction Temperature (TJ)		150
Storage Temperature Range (TSTG)		-55~+150
Thermal Resistance (RJA)	Junction to Ambient	90	/W
Total Gate Charge (Qg)	VDS=10V, VGS=4.5V, ID=5.0A	11 - 13	nC
Input Capacitance (Ciss)	VDS=10V, VGS=0V, f=1MHz	578	pF
Output Capacitance (Coss)	VDS=10V, VGS=0V, f=1MHz	116	pF
Reverse Transfer Capacitance (Crss)	VDS=10V, VGS=0V, f=1MHz	96	pF
Turn-On Time (Td(on))	VDS=10V, ID=1.0A, VGEN=4.5V, RG=6	14.5 - 25	nS
Turn-Off Time (Td(off))	VDS=10V, ID=1.0A, VGEN=4.5V, RG=6	46 - 67	nS