N Channel Enhancement Mode Transistor Slkor 2N7002KT with High Current Handling and Thermal Stability

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Product Description

Product Overview

This N-Channel Enhancement Mode Field Effect Transistor utilizes Trench Power LV MOSFET technology, offering high power and current handling capabilities. It is ESD protected up to 2.0KV (HBM) and is suitable for load/power switching, interfacing switching, and logic level shift applications.

Product Attributes

Brand: SLKORMICRO
Model: 2N7002KT
Package: SOT-523
Certifications: ESD Protected Up to 2.0KV (HBM)

Technical Specifications

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
Drain-source Voltage	VDS				60	V
Gate-source Voltage	VGS				±20	V
Drain Current	ID				100	mA
Pulsed Drain Current	IDM				1.5	A
Total Power Dissipation @ TA=25	PD	@ TA=25			0.15	W
Thermal Resistance Junction-to-Ambient @ Steady State	RJA	@ Steady State			357	/ W
Junction and Storage Temperature Range	TJ ,TSTG		-55+150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS= 0V, ID=250A	60			V
Zero Gate Voltage Drain Current	IDSS	VDS=60V,VGS=0V			1	µA
Gate-Body Leakage Current	IGSS	VGS= ±20V, VDS=0V			±10	µA
Gate Threshold Voltage	VGS(th)	VDS= VGS, ID=250µA	0.8	1.5	2.2	V
Static Drain-Source On-Resistance	RDS(ON)	VGS= 10V, ID=100mA		2.5	8.0	Ω
Static Drain-Source On-Resistance	RDS(ON)	VGS= 4.5V, ID=10mA		3.0	13.0	Ω
Diode Forward Voltage	VSD	IS=100mA,VGS=0V			1.2	V
Maximum Body-Diode Continuous Current	IS				100	mA
Input Capacitance	Ciss	VDS=30V,VGS=0V,f=1MHZ		18		pF
Output Capacitance	Coss	VDS=30V,VGS=0V,f=1MHZ		12		pF
Reverse Transfer Capacitance	Crss	VDS=30V,VGS=0V,f=1MHZ		7		pF
Total Gate Charge	Qg	VGS=10V,VDS=30V,ID=0.1A		1.7		nC
Gate Source Charge	Qgs	VGS=10V,VDS=30V,ID=0.1A		0.19
Gate Drain Charge	Qg d	VGS=10V,VDS=30V,ID=0.1A		0.27
Turn-on Delay Time	tD(on)	VGS=10V,VDD=30V,RG=6Ω,ID=0.1A		5		ns
Turn-off Delay Time	tD(off)	VGS=10V,VDD=30V,RG=6Ω,ID=0.1A		17		ns