Power switching 30V P Channel MOSFET Siliup SP30P38P8 featuring low RDSon and fast switching performance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP30P38P8 is a 30V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it suitable for power switching applications, hard switched and high frequency circuits, and uninterruptible power supplies. The device is 100% tested for single pulse avalanche energy.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 30P38
- Package: SOP-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -30 | V | |||
| RDS(on) | @-10V | 38 | m | |||
| ID | -5.8 | A | ||||
| RDS(on) | @-4.5V | 58 | m | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | -5.8 | A | |||
| Pulsed Drain Current | IDM | -23.2 | A | |||
| Single pulsed avalanche energy1 | EAS | 12 | mJ | |||
| Power Dissipation | PD | 1.5 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 89 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -30 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-24V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -1.5 | -2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-4.1A | - | 38 | 50 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-3A | - | 58 | 80 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-15V , VGS=0V , f=1MHz | - | 501 | - | pF |
| Output Capacitance | Coss | - | 72 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 57 | - | pF | |
| Total Gate Charge | Qg | VDS=-15V , VGS=-10V , ID=-5A | - | 9 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qgd | - | 2.3 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=-15V, VGS=-10V , RG=3, ID=-1A | - | 8.6 | - | nS |
| Rise Time | Tr | - | 5.0 | - | ||
| Turn-Off Delay Time | Td(off) | - | 28.2 | - | ||
| Fall Time | Tf | - | 13.5 | - | ||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A | - | - | -1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | -5.8 | A | |
| Reverse recover time | Trr | IS=-5A, di/dt=100A/us, TJ=25 | - | 31 | - | nS |
| Reverse recovery charge | Qrr | - | 10 | - | nC | |
| Package Information (SOP-8L) | ||||||
| Symbol | Dimensions (mm) | Min. | Max. | |||
| A | 1.35 | 1.75 | ||||
| A1 | 0.10 | 0.25 | ||||
| A2 | 1.35 | 1.55 | ||||
| b | 0.33 | 0.51 | ||||
| c | 0.17 | 0.25 | ||||
| D | 4.80 | 5.00 | ||||
| e | (REF.) | 1.27 | ||||
| E | 5.80 | 6.20 | ||||
| E1 | 3.80 | 4.00 | ||||
| L | 0.40 | 1.27 | ||||
| 0 | 8 | |||||
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