Low RDSon P Channel MOSFET Slkor SL3139KW Designed for Portable Electronics and Battery Circuits

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Product Description

Product Overview

The SL3139KW is a P-Channel MOSFET designed for surface mount applications. It features low RDS(on) and is suitable for low logic level gate drive, making it ideal for load/power switching, interfacing, logic switching, and battery management in ultra-small portable electronics. This lead-free product offers efficient switching performance.

Product Attributes

Lead Free Product is Acquired
Surface Mount Package
P-Channel Switch with Low RDS(on)
Operated at Low Logic Level Gate Drive

Technical Specifications

Symbol	Parameter	Condition	Min	Typ	Max	Unit
Absolute Maximum Ratings
VDS	Drain-Source Voltage				-20	V
VGS	Gate-Source Voltage			±10		V
TJ	Maximum Junction Temperature				150	±C
TSTG	Storage Temperature Range		-55		150	±C
IS	Diode Continuous Forward Current	Tc=25±C			-0.66	A
IDM	Pulse Drain Current	Tc=25±C			-1.2	A
ID	Tested Continuous Drain Current	Tc=25±C			-0.66	A
PD	Maximum Power Dissipation	Tc=25±C		0.2		W
RθJA	Thermal Resistance Junction-to-Ambient	Mounted on Large Heat Sink		625		±C/W
Static Electrical Characteristics @ TJ = 25±C (unless otherwise noted)
BV(BR)DSS	Drain-Source Breakdown Voltage	VGS=0V, ID=-250μA	-20			V
IDSS	Zero Gate Voltage Drain Current	VDS=-20V, VGS=0V			-1	uA
IGSS	Gate-Body Leakage Current	VGS=±10V, VDS=0V			±10	uA
VGS(th)	Gate Threshold Voltage	VDS=VGS, ID=-250μA	-0.35	-0.65	-1.1	V
RDS(on)	Drain-Source On-State Resistance	VGS=-4.5V, ID=-1.0A		380	520	mΩ
		VGS=-2.5V, ID=-0.8A		520	700	mΩ
		VGS=-1.8V, ID=-0.5A		750		mΩ
Dynamic Electrical Characteristics @ TJ = 25±C (unless otherwise stated)
CISS	Input Capacitance	VDS=-10V, VGS=0V, f=1MHz		115		pF
COSS	Output Capacitance	VDS=-10V, VGS=0V, f=1MHz		15		pF
CRSS	Reverse Transfer Capacitance	VDS=-10V, VGS=0V, f=1MHz		8.8		pF
Qg	Total Gate Charge	VDD=-10V, ID=-0.5A, VGS=-4.5V		1.25		nC
Qgs	Gate Source Charge	VDD=-10V, ID=-0.5A, VGS=-4.5V		0.35		nC
Qgd	Gate Drain Charge	VDD=-10V, ID=-0.5A, VGS=-4.5V		0.29		nC
td(on)	Turn-on Delay Time	VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω		9		nS
tr	Turn-on Rise Time	VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω		5.5		nS
td(off)	Turn-Off Delay Time	VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω		30.8		nS
tf	Turn-Off Fall Time	VDS=-10V, ID=-0.2A, VGS=-4.5V, RG=10Ω		20		nS
Source- Drain Diode Characteristics
VSD	Forward on voltage	Tj=25±C, Is=-0.66A			-1.2	V