Power MOSFET Siliup SP60N06GP8 60V N Channel Fast Switching Device with Split Gate Trench Technology

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Product Description

Product Overview

The SP60N06GP8 is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. It features advanced split gate trench technology for fast switching and is designed for power management and switched-mode power supply applications. The device is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: 60N06G

Technical Specifications

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS			60		V
Drain-Source On-state Resistance	RDS(on)TYP	@10V		6.5		m
Drain-Source On-state Resistance	RDS(on)TYP	@4.5V		8.0		m
Continuous Drain Current	ID				16	A
Features
Fast Switching
Advanced Split Gate Trench Technology
100% Single Pulse avalanche energy Test
Application
Power Management
Switched mode power supply
Package
SOP-8L
Absolute Maximum Ratings (Ta=25, unless otherwise noted)
Drain-Source Voltage	VDSS			60		V
Gate-Source Voltage	VGSS			20		V
Continuous Drain Current	ID				16	A
Continuous Drain Current	ID	(Ta=100C)			11	A
Pulse Drain Current Tested	IDM				64	A
Single Pulse Avalanche Energy	EAS			156		mJ
Power Dissipation	PD				3	W
Thermal Resistance Junction-to-Ambient	RJA			41.67		C/W
Storage Temperature Range	TJ		-55		150	C
Operating Junction Temperature Range	TSTG		-55		150	C
Electrical Characteristics (Ta=25, unless otherwise noted)
Drain-Source Breakdown Voltage	BVDSS	VGS=0V, ID=250mA	60	-	-	V
Zero Gate Voltage Drain Current	IDSS	VDS=48V, VGS=0V	-	-	1	uA
Gate Leakage Current	IGSS	VGS=20V, VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VDS=VGS, ID=250uA	1	1.8	2.5	V
Drain-Source On-state Resistance	RDS(ON)	VGS=10V, ID=6A	-	6.5	8	m
Drain-Source On-state Resistance	RDS(ON)	VGS=4.5V, ID=4A	-	8	11	m
Input Capacitance	Ciss	VGS=0V, VDS=30V, F=1MHz	-	1982	-	pF
Output Capacitance	Coss		-	390	-	pF
Reverse Transfer Capacitance	Crss		-	13	-	pF
Total Gate Charge	Qg	VDS=30V, VGS=10V, ID=6A	-	35	-	nC
Gate-Source Charge	Qgs		-	7.2	-
Gate-Drain Charge	Qg d		-	5	-
Turn-On Delay Time	td(on)	VDD=30V, ID=6A, VGS=10V, RG=4.7	-	10	-	nS
Rise Time	tr		-	35	-
Turn-Off Delay Time	td(off)		-	31.8	-
Fall Time	tf		-	56.4	-
Source-Drain Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	16	A
Reverse Recovery Time	Trr	IS=12 A,di/dt=100 A/sTJ=25	-	24	-	nS
Reverse Recovery Charge	Qrr		-	36	-	nC
Package Information
Package Type				SOP-8L
Dimensions (mm)			Min	Max
A			1.35	1.75
A1			0.10	0.25
A2			1.35	1.55
b			0.33	0.51
c			0.17	0.25
D			4.80	5.00
e			1.27 REF.
E			5.80	6.20
E1			3.80	4.00
L			0.40	1.27
			0	8