85V N Channel Power MOSFET Siliup SP85N05AGHTD Featuring Low RDS on and High Avalanche Energy Reliability
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MOQ:
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Delivery Time:
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Product Description
Product Overview
The SP85N05AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, and power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Device Code: 85N05AGH
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 85 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 4.5 | m | ||
| ID | ID | 110 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | (Ta=25 unless otherwise noted) | 85 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current (Tc=25) | ID | 110 | A | |||
| Continuous Drain Current (Tc=100) | ID | 75 | A | |||
| Pulsed Drain Current | IDM | 440 | A | |||
| Single Pulse Avalanche Energy | EAS | 784 | mJ | |||
| Power Dissipation (Tc=25) | PD | 170 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.74 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 85 | 90 | - | V |
| Drain Cut-Off Current | IDSS | VDS = 68V, VGS = 0V | - | - | 1 | A |
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | - | - | 0.1 | A |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 2 | 3 | 4 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 20A | - | 4.5 | 5.7 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =40V, VGS = 0V, f = 1.0MHz | - | 3543 | - | pF |
| Output Capacitance | Coss | - | 1058 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 23 | - | pF | |
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=165A | - | 49 | - | nC |
| Gate-Source Charge | Qgs | - | 16 | - | nC | |
| Gate-Drain Charge | Qgd | - | 13 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 40V, ID=165A , RG = 1.6 | - | 17 | - | nS |
| Rise Time | tr | - | 25 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 36 | - | nS | |
| Fall Time | tf | - | 15 | - | nS | |
| Drain-Source Body Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 110 | A | |
| Reverse Recovery Time | Trr | IS=20A, di/dt=100A/us, TJ=25 | - | 62 | - | nS |
| Reverse Recovery Charge | Qrr | - | 103 | - | nC | |
Note: 1. The test condition is VDD=45V,VGS=10V,L=0.5mH,RG=25
Package Information
Package: TO-263
Pin Configuration: 1:G 2:D 3:S
| Symbol | Dimensions In Millimeters (Min.) | Dimensions In Millimeters (Max.) | Dimensions In Inches (Min.) | Dimensions In Inches (Max.) |
|---|---|---|---|---|
| A | 4.470 | 4.670 | 0.176 | 0.184 |
| A1 | 0.000 | 0.150 | 0.000 | 0.006 |
| B | 1.120 | 1.420 | 0.044 | 0.056 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.310 | 0.530 | 0.012 | 0.021 |
| c1 | 1.170 | 1.370 | 0.046 | 0.054 |
| D | 10.010 | 10.310 | 0.394 | 0.406 |
| E | 8.500 | 8.900 | 0.335 | 0.350 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| L | 14.940 | 15.500 | 0.588 | 0.610 |
| L1 | 4.950 | 5.450 | 0.195 | 0.215 |
| L2 | 2.340 | 2.740 | 0.092 | 0.108 |
| L3 | 1.300 | 1.700 | 0.051 | 0.067 |
| 0 | 8 | 0 | 8 | |
| V | 5.600 REF. | 0.220 REF. |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP85N05AGHTD | TO-263 | 800 |
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Company
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Location
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Contact Person
Sellina