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85V N Channel Power MOSFET Siliup SP85N05AGHTD Featuring Low RDS on and High Avalanche Energy Reliability

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Product Description

Product Overview

The SP85N05AGHTD is an 85V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed with advanced split gate trench technology, it offers fast switching, low gate charge, and low RDS(on). This MOSFET is ideal for power switching applications, DC-DC converters, and power management systems. It features 100% single pulse avalanche energy testing for enhanced reliability.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Device Code: 85N05AGH

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 85 V
RDS(on)TYP RDS(on) @10V 4.5 m
ID ID 110 A
Absolute Maximum Ratings
Drain-Source Voltage VDS (Ta=25 unless otherwise noted) 85 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 110 A
Continuous Drain Current (Tc=100) ID 75 A
Pulsed Drain Current IDM 440 A
Single Pulse Avalanche Energy EAS 784 mJ
Power Dissipation (Tc=25) PD 170 W
Thermal Resistance Junction-to-Case RJC 0.74 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 85 90 - V
Drain Cut-Off Current IDSS VDS = 68V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1 A
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2 3 4 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 4.5 5.7 m
Dynamic Characteristics
Input Capacitance Ciss VDS =40V, VGS = 0V, f = 1.0MHz - 3543 - pF
Output Capacitance Coss - 1058 - pF
Reverse Transfer Capacitance Crss - 23 - pF
Total Gate Charge Qg VDS=40V , VGS=10V , ID=165A - 49 - nC
Gate-Source Charge Qgs - 16 - nC
Gate-Drain Charge Qgd - 13 - nC
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS = 40V, ID=165A , RG = 1.6 - 17 - nS
Rise Time tr - 25 - nS
Turn-Off Delay Time td(off) - 36 - nS
Fall Time tf - 15 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 110 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 62 - nS
Reverse Recovery Charge Qrr - 103 - nC

Note: 1. The test condition is VDD=45V,VGS=10V,L=0.5mH,RG=25

Package Information

Package: TO-263

Pin Configuration: 1:G 2:D 3:S

Symbol Dimensions In Millimeters (Min.) Dimensions In Millimeters (Max.) Dimensions In Inches (Min.) Dimensions In Inches (Max.)
A 4.470 4.670 0.176 0.184
A1 0.000 0.150 0.000 0.006
B 1.120 1.420 0.044 0.056
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.310 0.530 0.012 0.021
c1 1.170 1.370 0.046 0.054
D 10.010 10.310 0.394 0.406
E 8.500 8.900 0.335 0.350
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
L 14.940 15.500 0.588 0.610
L1 4.950 5.450 0.195 0.215
L2 2.340 2.740 0.092 0.108
L3 1.300 1.700 0.051 0.067
0 8 0 8
V 5.600 REF. 0.220 REF.

Order Information

Device Package Unit/Tape
SP85N05AGHTD TO-263 800

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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