Power Switching N Channel MOSFET SLKOR SL2308A 60V 3A with Low Gate Charge and Fast Switching
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Product Description
Product Overview
The SL2308A is a 60V/3A N-Channel MOSFET designed for power switching applications. It features an excellent package for good heat dissipation, ultra low gate charge, low reverse transfer capacitance, and fast switching capability. Avalanche energy is specified for reliable operation.
Product Attributes
- Brand: SLKOR Micro
- Device Code: MS08
- Part Number: SL2308A
- Package: SOT-23
- Revision: Rev.1
- Date: 18 December 2019
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BV(BR)DSS | VGS=0VID=250A | 60 | -- | -- | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60VVGS=0V | -- | -- | 1 | uA |
| Gate-Body Leakage Current | IGSS | VGS=20VVDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGSID=250A | 1.1 | 1.7 | 2.5 | V |
| Drain-Source On-State Resistance | RDS(on) | VGS=10V ID=3A | -- | 58 | 100 | m |
| Drain-Source On-State Resistance | RDS(on) | VGS=4.5VID=2A | -- | 70 | 150 | m |
| Input Capacitance | CISS | VDS=30VVGS=0V f=1MHz | -- | 400 | -- | pF |
| Output Capacitance | COSS | VDS=30VVGS=0V f=1MHz | -- | 28 | -- | pF |
| Reverse Transfer Capacitance | CRSS | VDS=30VVGS=0V f=1MHz | -- | 23 | -- | pF |
| Total Gate Charge | Qg | VDS=30VID=3A VGS=10V | -- | 9 | -- | nC |
| Gate Source Charge | Qgs | VDS=30VID=3A VGS=10V | -- | 1 | -- | nC |
| Gate Drain Charge | Qgd | VDS=30VID=3A VGS=10V | -- | 2.5 | -- | nC |
| Turn-on Delay Time | td(on) | VDD=30VID=3A VGS=10VRG=2.3 | -- | 4 | -- | nS |
| Turn-on Rise Time | tr | VDD=30VID=3A VGS=10VRG=2.3 | -- | 10 | -- | nS |
| Turn-Off Delay Time | td(off) | VDD=30VID=3A VGS=10VRG=2.3 | -- | 12.5 | -- | nS |
| Turn-Off Fall Time | tf | VDD=30VID=3A VGS=10VRG=2.3 | -- | 1.8 | -- | nS |
| Forward on voltage | VSD | Tj=25Is=3A | -- | 0.8 | 1.2 | V |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Unit |
| Drain-Source Breakdown Voltage | VDS | 60 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Maximum Junction Temperature | TJ | 150 | C |
| Storage Temperature Range | TSTG | -55 to 150 | C |
| Diode Continuous Forward Current | IS | 3 | A |
| Pulse Drain Current | IDM | 12 | A |
| Tested Continuous Drain Current@GS=10V | ID | 3 | A |
| Maximum Power Dissipation | PD | -- | W |
| Thermal Resistance Junction-Ambient | RJA | 375 | C/W |
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