power management Siliup SP40N03BTD 40V N Channel MOSFET with low gate charge and fast switching speeds
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP40N03BTD is a 40V N-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. It features fast switching speeds, low Gate Charge and Rds(on), and utilizes advanced Split Gate Trench Technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for demanding applications such as DC-DC converters, motor control, and portable equipment.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP40N03BTD
- Technology: Advanced Split Gate Trench Technology
- Testing: 100% Single Pulse avalanche energy Test
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| V(BR)DSS | V(BR)DSS | 40 | V | |||
| RDS(on)TYP | RDS(on) | @10V | 3.3 | m | ||
| RDS(on)TYP | RDS(on) | @4.5V | 5.5 | m | ||
| ID | ID | 130 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | 40 | V | |||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | 130 | A | |||
| Continuous Drain Current (Tc=100C) | ID | 87 | A | |||
| Pulse Drain Current Tested | IDM | 520 | A | |||
| Single pulsed avalanche energy | EAS | 400 | mJ | |||
| Power Dissipation (Tc=25C) | PD | 125 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 1.0 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 40 | - | - | V |
| Drain-Source Leakage Current | IDSS | VDS=32V , VGS=0V , TJ=25 | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.0 | 1.6 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =10V, ID =75A | - | 3.3 | 4.2 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS =4.5V, ID =75A | - | 5.5 | 8 | m |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=20V , VGS=0V , f=1MHz | - | 5500 | - | pF |
| Output Capacitance | Coss | - | 970 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 380 | - | pF | |
| Total Gate Charge | Qg | VDS=20V , VGS=10V , ID=20A | - | 75 | - | nC |
| Gate-Source Charge | Qgs | - | 10.5 | - | nC | |
| Gate-Drain Charge | Qgd | - | 17 | - | nC | |
| Switching Characteristics | ||||||
| Turn-On Delay Time | Td(on) | VDD=20V VGS=10V , RG=3, ID=2A | - | 15 | - | nS |
| Rise Time | Tr | - | 18 | - | nS | |
| Turn-Off Delay Time | Td(off) | - | 52 | - | nS | |
| Fall Time | Tf | - | 23 | - | nS | |
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - | - | 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - | - | 130 | A | |
| Reverse recover time | Trr | IS=20A, di/dt=100A/us, Tj=25 | - | 23 | - | nS |
| Reverse recovery charge | Qrr | - | 12 | - | nC | |
| Package Information | ||||||
| Package Type | TO-263 | |||||
| Marking | 40N03B | |||||
| Order Information | ||||||
| Device | Package | Unit/Tape | ||||
| SP40N03BTD | TO-263 | 800 | ||||
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