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Power MOSFET 100V N-Channel Device Siliup SP010N08GTQ with Low Gate Charge and Fast Switching

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Price: Negotiable
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Product Description

Product Overview

The SP010N08GTQ is a 100V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd. This device features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. It is 100% tested for single pulse avalanche energy. Ideal for power switching applications, battery management, and uninterruptible power supplies.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Code: SP010N08GTQ
  • Technology: Advanced Split Gate Trench Technology

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 100 V
RDS(on)TYP RDS(on) @10V 8.5 12 m
RDS(on)TYP RDS(on) @4.5V 11 15 m
ID ID 65 A
Absolute Maximum Ratings
Drain-Source Voltage VDS 100 V
Gate-Source Voltage VGS 20 V
Continuous Drain Current (Tc=25) ID 65 A
Continuous Drain Current (Tc=100) ID 45 A
Pulsed Drain Current IDM 260 A
Single Pulse Avalanche Energy1 EAS 156 mJ
Power Dissipation (Tc=25) PD 110 W
Thermal Resistance Junction-to-Case RJC 1.14 /W
Storage Temperature Range TSTG -55 150
Operating Junction Temperature Range TJ -55 150
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 100 - - V
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1 uA
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.2 1.9 2.5 V
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 20A - 8.5 12 m
Drain-Source ON Resistance RDS(ON) VGS = 4.5V, ID = 15A - 11 15 m
Dynamic Characteristics
Input Capacitance Ciss VDS =50V, VGS = 0V, f = 1.0MHz - 1635 - pF
Output Capacitance Coss - 339 - pF
Reverse Transfer Capacitance Crss - 22 - pF
Total Gate Charge Qg VDS=50V , VGS=10V , ID=50A - 14 - nC
Gate-Source Charge Qgs - 5 -
Gate-Drain Charge Qgd - 7 -
Switching Characteristics
Turn-On Delay Time td(on) VGS = 10V, VDS =50V, ID=50A RG = 4.7 - 8 - nS
Rise Time tr - 16 -
Turn-Off Delay Time td(off) - 31 -
Fall Time tf - 27 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V , IS=1A , TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 65 A
Reverse Recovery Time Trr IS=20A, di/dt=100A/us, TJ=25 - 49 - nS
Reverse Recovery Charge Qrr - 78 - nC
Order Information Package Unit/Tube
SP010N08GTQ TO-220-3L 50
Marking
010N08G : Product code
** : Week code
TO-220-3L Package Information (Dimensions in Millimeters / Inches)
Symbol Dimensions Min. Dimensions Max. Dimensions Min. Dimensions Max. Unit
A 4.400 4.600 0.173 0.181
A1 2.250 2.550 0.089 0.100
b 0.710 0.910 0.028 0.036
b1 1.170 1.370 0.046 0.054
c 0.330 0.650 0.013 0.026
c1 1.200 1.400 0.047 0.055
D 9.910 10.250 0.390 0.404
E 8.950 9.750 0.352 0.384
E1 12.650 13.050 0.498 0.514
e 2.540 TYP. 0.100 TYP.
e1 4.980 5.180 0.196 0.204
F 2.650 2.950 0.104 0.116
H 7.900 8.100 0.311 0.319
h 0.000 0.300 0.000 0.012
L 12.900 13.400 0.508 0.528
L1 2.850 3.250 0.112 0.128
V 6.900 REF. 0.276 REF.
3.400 3.800 0.134 0.150

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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