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China N Channel Power MOSFET Siliup SP60N08GNJ 60V Rated Device with Fast Switching and Low On Resistance for sale

N Channel Power MOSFET Siliup SP60N08GNJ 60V Rated Device with Fast Switching and Low On Resistance

Price Negotiable
Price: Negotiable
MOQ: Negotiable
Delivery Time: Negotiable
Product Description

Product Overview

The SP60N08GNJ is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) due to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supplies. It comes in a PDFN3X3-8L package.

Product Attributes

  • Brand: Siliup Semiconductor Technology Co. Ltd.
  • Product Type: N-Channel Power MOSFET
  • Technology: Advanced Split Gate Trench Technology
  • Package: PDFN3X3-8L
  • Device Code: SP60N08GNJ

Technical Specifications

Parameter Symbol Test Condition Min Typ Max Unit
Product Summary
V(BR)DSS V(BR)DSS 60 V
RDS(on) RDS(on)TYP @10V 7.5 m
RDS(on) RDS(on)TYP @4.5V 10 m
ID ID 40 A
Absolute Maximum Ratings
Drain-Source Voltage VDSS (Ta=25, unless otherwise noted) 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID (Tc=25C) 40 A
Continuous Drain Current ID (Tc=100C) 30 A
Pulse Drain Current IDM Tested 160 A
Single Pulse Avalanche Energy EAS 90 mJ
Power Dissipation PD (Tc=25C) 40 W
Thermal Resistance Junction-to-Case RJC 3.13 C/W
Maximum Junction Temperature TJ -55 150 C
Storage Temperature Range TSTG -55 150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250mA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=48V, VGS=0V - - 1 uA
Gate Leakage Current IGSS VGS=20V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1 1.5 2.5 V
Drain-Source On-state Resistance RDS(ON) VGS=10V, ID=20A - 7.5 10 m
Drain-Source On-state Resistance RDS(ON) VGS=4.5V, ID=10A - 10 13 m
Dynamic Characteristics
Input Capacitance Ciss VGS=0V, VDS=30V, F=1MHz - 1350 - pF
Output Capacitance Coss - 310 - pF
Reverse Transfer Capacitance Crss - 25 - pF
Total Gate Charge Qg VDS=30V, VGS=10V, ID=20A - 27.9 - nC
Gate-Source Charge Qgs - 7.8 - nC
Gate-Drain Charge Qgd - 6.2 - nC
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V, ID=20A, VGS=10V, RG=4.7 - 14 - nS
Rise Time tr - 26 - nS
Turn-Off Delay Time td(off) - 33.8 - nS
Fall Time tf - 26.4 - nS
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD VGS=0V, IS=1A, TJ=25 - - 1.2 V
Maximum Body-Diode Continuous Current IS - - 40 A
Reverse Recovery Time trr IS=30 A, di/dt=100 A/s, TJ=25 - 36 - nS
Reverse Recovery Charge Qrr - 23 - nC
Package Information (PDFN3X3-8L)
Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max.
A 0.650 0.850 0.026 0.033
A1 0.152 REF. 0.006 REF.
A2 0~0.05 0~0.002
D 2.900 3.100 0.114 0.122
D1 2.300 2.600 0.091 0.102
E 2.900 3.100 0.114 0.122
E1 3.150 3.450 0.124 0.136
E2 1.535 1.935 0.060 0.076
b 0.200 0.400 0.008 0.016
e 0.550 0.750 0.022 0.030
L 0.300 0.500 0.012 0.020
L1 0.180 0.480 0.007 0.019
L2 0~0.100 0~0.004
L3 0~0.100 0~0.004
H 0.315 0.515 0.012 0.020
9 13 9 13

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Company Hefei Purple Horn E-Commerce Co., Ltd.
Location Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person Sellina

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