power MOSFET Siliup SP60P05GNK 60V P Channel component with halogen free and ROHS compliant features
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Delivery Time:
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Product Description
Product Overview
The SP60P05GNK is a 60V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for efficient power management. Featuring advanced Split Gate Trench Technology, it offers fast switching speeds and a robust surface mount package. This ROHS Compliant & Halogen-Free component is ideal for applications such as DC-DC converters and motor control, with 100% Single Pulse avalanche energy testing ensuring reliability.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: SP60P05GNK
- Technology: Advanced Split Gate Trench Technology
- Compliance: ROHS Compliant & Halogen-Free
- Testing: 100% Single Pulse avalanche energy Test
- Package Type: PDFN56-8L
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -60 | V | |||
| RDS(on) Typ. @ -10V | 5.5 | 7.4 | m | |||
| RDS(on) Typ. @ -4.5V | 7.5 | 10 | m | |||
| Continuous Drain Current | ID | -110 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (Ta=25, unless otherwise noted) | -60 | V | ||
| Gate-Source Voltage | VGSS | 20 | V | |||
| Continuous Drain Current (Tc=25C) | ID | -110 | A | |||
| Continuous Drain Current (Tc=100C) | ID | -73 | A | |||
| Pulse Drain Current Tested | IDM | -440 | A | |||
| Maximum Power Dissipation (Tc=25C) | PD | 118 | W | |||
| Single pulsed avalanche energy | EAS | 1092 | mJ | |||
| Thermal Resistance-Junction to Case | RJC | 1.06 | C/W | |||
| Maximum Junction Temperature | TJ | -55 | 150 | C | ||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250uA | -60 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=-48V , VGS=0V , TJ=25 | -1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V , VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1.0 | -2.0 | -3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V , ID=-30A | 5.5 | 7.4 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-30A | 7.5 | 10 | m | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS=-30V , VGS=0V , f=1MHz | 6185 | pF | ||
| Output Capacitance | Coss | 1132 | pF | |||
| Reverse Transfer Capacitance | Crss | 81 | pF | |||
| Switching Characteristics | ||||||
| Total Gate Charge | Qg | VDS=-30V , VGS=-10V , ID=-40A | 82 | nC | ||
| Gate-Source Charge | Qgs | 26 | nC | |||
| Gate-Drain Charge | Qg d | 18 | nC | |||
| Turn-On Delay Time | Td(on) | VDD=-30V, VGS=-10V , RG=2.6, ID=-40A | 15 | ns | ||
| Rise Time | Tr | 52 | ns | |||
| Turn-Off Delay Time | Td(off) | 135 | ns | |||
| Fall Time | Tf | 168 | ns | |||
| Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Reverse recover time | Trr | IS=-40A, di/dt=200A/us, TJ=25 | 65 | ns | ||
| Reverse recovery charge | Qrr | 238 | nC | |||
| Diode Continuous Current | IS | -110 | A | |||
| Package Information (PDFN5X6-8L) | ||||||
| Dimension | Symbol | Min. (mm) | Max. (mm) | Min. (in) | Max. (in) | |
| A | 0.900 | 1.000 | 0.035 | 0.039 | ||
| A3 | 0.254 | REF. | 0.010 | REF. | ||
| D | 4.944 | 5.096 | 0.195 | 0.201 | ||
| E | 5.974 | 6.126 | 0.235 | 0.241 | ||
| D1 | 3.910 | 4.110 | 0.154 | 0.162 | ||
| E1 | 3.375 | 3.575 | 0.133 | 0.141 | ||
| D2 | 4.824 | 4.976 | 0.190 | 0.196 | ||
| E2 | 5.674 | 5.826 | 0.223 | 0.229 | ||
| k | 1.190 | 1.390 | 0.047 | 0.055 | ||
| b | 0.350 | 0.450 | 0.014 | 0.018 | ||
| e | 1.270 | TYP. | 0.050 | TYP. | ||
| L | 0.559 | 0.711 | 0.022 | 0.028 | ||
| L1 | 0.424 | 0.576 | 0.017 | 0.023 | ||
| H | 0.574 | 0.726 | 0.023 | 0.029 | ||
| 10 | 12 | 10 | 12 | |||
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