P Channel MOSFET 20V Device Siliup SP2013TS Offering Low RDS on 13.5m and High Current Handling up to 11A
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Product Description
Product Overview
The SP2013TS is a 20V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for high power and current handling capabilities. It is suitable for surface mount applications and is ideal for use as a battery switch and in DC/DC converters. This device offers a low RDS(on) of 13.5m at -4.5V and a continuous drain current of -11A.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP2013TS
- Technology: P-Channel MOSFET
- Voltage Rating: 20V
- Package: SOT-23-6L
- Device Code: 2013
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | -20 | V | |||
| Static Drain-Source On-Resistance | RDS(on) | -4.5V | 13.5 | m | ||
| Static Drain-Source On-Resistance | RDS(on) | -2.5V | 16 | m | ||
| Continuous Drain Current | ID | -11 | A | |||
| Absolute Maximum Ratings (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Voltage | VDSS | -20 | V | |||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Continuous Drain Current | ID | -11 | A | |||
| Pulse Drain Current | IDM | Tested | -44 | A | ||
| Power Dissipation | PD | 1.3 | W | |||
| Thermal Resistance Junction-to-Ambient | RJA | 96 | C/W | |||
| Storage Temperature Range | TSTG | -55 | 150 | C | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | C | ||
| Electrical Characteristics (Ta=25, unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=-250A | -20 | - | V | |
| Drain-Source Leakage Current | IDSS | VDS=-16V , VGS=0V | - | - | -1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=12V , VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V , ID=-5A | - | 13.5 | 17 | m |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-2.5V , ID=-4A | - | 16 | 22 | m |
| Input Capacitance | Ciss | VDS=-10V , VGS=0V , f=1MHz | - | 1800 | - | pF |
| Output Capacitance | Coss | - | 215 | - | ||
| Reverse Transfer Capacitance | Crss | - | 176 | - | ||
| Total Gate Charge | Qg | VDS=-10V , VGS=-4.5V , ID=-7A | - | 16 | - | nC |
| Gate-Source Charge | Qgs | - | 4.3 | - | ||
| Gate-Drain Charge | Qg | - | 3.6 | - | ||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=-6V VGS=-4.5V , RG=3, ID=-7A | - | 8 | - | nS |
| Turn-On Rise Time | tr | - | 34 | - | ||
| Turn-Off Delay Time | td(off) | - | 65 | - | ||
| Turn-Off Fall Time | tf | - | 70 | - | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | - | - | -1.2 | V |
Package Information (SOT-23-6L)
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min | Max | Min | Max | |
| A | 1.050 | 1.250 | 0.041 | 0.049 |
| A1 | 0.000 | 0.100 | 0.000 | 0.004 |
| A2 | 1.050 | 1.150 | 0.041 | 0.045 |
| b | 0.300 | 0.500 | 0.012 | 0.020 |
| c | 0.100 | 0.200 | 0.004 | 0.008 |
| D | 2.820 | 3.020 | 0.111 | 0.119 |
| E | 1.500 | 1.700 | 0.059 | 0.067 |
| E1 | 2.650 | 2.950 | 0.104 | 0.116 |
| e | 0.950(BSC) | 0.037(BSC) | ||
| e1 | 1.800 | 2.000 | 0.071 | 0.079 |
| L | 0.300 | 0.600 | 0.012 | 0.024 |
| 0 | 8 | 0 | 8 | |
Order Information
| Device | Package | Unit/Tape |
|---|---|---|
| SP2013TS | SOT-23-6L | 3000 |
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