Power management MOSFET Siliup SP4227TQ 200V N Channel with low on resistance and thermal efficiency
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Delivery Time:
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Product Description
Product Overview
The SP4227TQ is a 200V N-Channel MOSFET designed for efficient power management applications. It features fast switching capabilities, a high-density cell design for ultra-low RDS(on), and an excellent package for good heat dissipation. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for load switching, PWM applications, and general power management tasks.
Product Attributes
- Brand: Shanghai Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP4227TQ
- Channel Type: N-Channel
- Package Type: TO-220-3L-C
Technical Specifications
| Parameter | Symbol | Condition | Limit | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | VDS | 200 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Drain Current-Continuous (Tc=25) | ID | 70 | A | |
| Pulsed Drain Current | IDM | 280 | A | |
| Maximum Power Dissipation (Tc=25) | PD | 330 | W | |
| Single Pulse Avalanche Energy (1) | EAS | 126 | mJ | |
| Thermal Resistance, Junction-to-Case (2) | RJC | 0.38 | /W | |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 To 150 | ||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 200 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=160V, VGS=0V | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 3 - 5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=40A | 19 - 24 | m |
| Input Capacitance | CLSS | VDS=25V, VGS=0V, F=1.0MHz | 4711 | PF |
| Output Capacitance | COSS | 469 | PF | |
| Reverse Transfer Capacitance | CRSS | 97 | PF | |
| Total Gate Charge | Qg | VDS=100V, ID=40A, VGS=10V | 75 | nC |
| Gate-Source Charge | Qgs | 47 | - | |
| Gate-Drain Charge | Qgd | 23 | - | |
| Turn-on Delay Time | td(on) | VDD=100V, ID=40A, VGS=10V, RG=2.5 | 32 | nS |
| Turn-on Rise Time | tr | 23 | - | |
| Turn-Off Delay Time | td(off) | 25 | - | |
| Turn-Off Fall Time | tf | 31 | - | |
| Diode Forward Voltage (3) | VSD | VGS=0V, IS=1A | 1.2 | V |
| Reverse Recovery Time | trr | TJ= 25C, IF= 40A, VDD = 50V, di/dt = 100A/s | 101 | ns |
| Reverse Recovery Charge | Qrr | 433 | nC |
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.400 | 4.600 | 0.173 | 0.181 |
| A1 | 2.250 | 2.550 | 0.089 | 0.100 |
| b | 0.710 | 0.910 | 0.028 | 0.036 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.330 | 0.650 | 0.013 | 0.026 |
| c1 | 1.200 | 1.400 | 0.047 | 0.055 |
| D | 9.910 | 10.250 | 0.390 | 0.404 |
| E | 8.950 | 9.750 | 0.352 | 0.384 |
| E1 | 12.650 | 13.050 | 0.498 | 0.514 |
| e | 2.540 TYP. | 0.100 TYP. | ||
| e1 | 4.980 | 5.180 | 0.196 | 0.204 |
| F | 2.650 | 2.950 | 0.104 | 0.116 |
| H | 7.900 | 8.100 | 0.311 | 0.319 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 12.900 | 13.400 | 0.508 | 0.528 |
| L1 | 2.850 | 3.250 | 0.112 | 0.128 |
| V | 6.900 REF. | 0.276 REF. | ||
| 3.400 | 3.800 | 0.134 | 0.150 | |
Marking: 4227 : Product code, ** : Week code.
Circuit Diagram: TO-220-3L-C(1:G 2:D 3:S)
Notes:
- (1) EAS condition: TJ=25, VDD=50V, VG=10V, L=0.3mH, Rg=25
- (2) Surface Mounted on FR4 Board, t 10 sec.
- (3) Pulse Test: Pulse Width 300s, Duty Cycle 2%.
- (4) Guaranteed by design, not subject to production.
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