1000V N Channel Planar MOSFET Siliup SP4N100TQ offers low Rdson and fast switching for power management
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP4N100TQ is a 1000V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for efficient power conversion, it features fast switching, low gate charge, and low Rdson. This MOSFET is 100% tested for single pulse avalanche energy and is ideal for applications such as DC-DC converters, high-frequency switching, and synchronous rectification. It comes in a TO-220-3L package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Line: Planar MOSFET
- Channel Type: N-Channel
- Package: TO-220-3L (Pinout: 1:G, 2:D, 3:S)
- Device Code: 4N100
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Product Summary | ||||||
| Drain-Source Voltage | V(BR)DSS | 1000 | V | |||
| Drain-Source ON Resistance | RDS(on)TYP | @10V | 2.2 | |||
| Continuous Drain Current | ID | 4 | A | |||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 1000 | V | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Continuous Drain Current (Tc=25) | ID | 4 | A | |||
| Continuous Drain Current (Tc=100) | ID | 2.66 | A | |||
| Pulsed Drain Current | IDM | 16 | A | |||
| Single Pulse Avalanche Energy | EAS | 320 | mJ | |||
| Power Dissipation (Tc=25) | PD | 146 | W | |||
| Thermal Resistance Junction-to-Case | RJC | 0.96 | /W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID = 250A, VGS = 0V | 1000 | V | ||
| Drain Cut-Off Current | IDSS | VDS = 800V, VGS = 0V | 1 | A | ||
| Gate Leakage Current | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 3.0 | 4.0 | 5.0 | V |
| Drain-Source ON Resistance | RDS(ON) | VGS = 10V, ID = 2A | 2.2 | 2.8 | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =25V, VGS = 0V, f = 1.0MHz | 1124 | pF | ||
| Output Capacitance | Coss | 123 | pF | |||
| Reverse Transfer Capacitance | Crss | 25 | pF | |||
| Total Gate Charge | Qg | VDS=800V , VGS=10V , ID=4A | 55 | nC | ||
| Gate-Source Charge | Qgs | 5.7 | ||||
| Gate-Drain Charge | Qg d | 36 | ||||
| Switching Characteristics | ||||||
| Turn-On Delay Time | td(on) | VDD=500V , VGS=10V , RG=25, ID=4A | 33 | nS | ||
| Rise Time | tr | 35 | ||||
| Turn-Off Delay Time | td(off) | 241 | ||||
| Fall Time | tf | 69 | ||||
| Source-Drain Diode Characteristics | ||||||
| Source-Drain Diode Forward Voltage | VSD | IS = 1A, VGS = 0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 4 | A | |||
| Body Diode Reverse Recovery Time | Trr | IS = 4A, dIF/dt = 100A/us | 765 | nS | ||
| Body Diode Reverse Recovery Charge | Qrr | 5.5 | uC | |||
Note: 1. The test condition for EAS is VDD=70V, VGS=10V, L=10mH, RG=25.
Package Information (TO-220-3L):
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
|---|---|---|---|---|
| Min. | Max. | Min. | Max. | |
| A | 4.850 | 5.150 | 0.191 | 0.200 |
| A1 | 2.200 | 2.600 | 0.087 | 0.102 |
| b2 | 1.800 | 2.200 | 0.071 | 0.087 |
| b | 1.000 | 1.400 | 0.039 | 0.055 |
| b1 | 2.800 | 3.200 | 0.110 | 0.126 |
| c | 0.500 | 0.700 | 0.020 | 0.028 |
| c1 | 1.900 | 2.100 | 0.075 | 0.083 |
| D | 15.450 | 15.750 | 0.608 | 0.620 |
| E1 | 3.500 REF. | 0.138 REF. | ||
| E2 | 3.600 REF. | 0.142 REF. | ||
| L | 40.900 | 41.300 | 1.610 | 1.626 |
| L1 | 24.800 | 25.100 | 0.976 | 0.988 |
| L2 | 20.300 | 20.600 | 0.799 | 0.811 |
| 7.100 | 7.300 | 0.280 | 0.287 | |
| e | 5.450 TYP. | 0.215 TYP. | ||
| H1 | 5.980 REF. | 0.235 REF. | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 |
Order Information:
| Device | Package | Unit/Tube |
|---|---|---|
| SP4N100TQ | TO-220-3L | 50 |
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