P Channel Enhancement Mode MOSFET Slkor SL3405 Engineered for Electronic Switching and Amplification

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Product Description

SL3405 P-Channel Enhancement-Mode MOSFET

The SL3405 is a P-channel enhancement-mode MOSFET designed for various electronic applications. Its robust ratings and electrical characteristics make it suitable for general-purpose switching and amplification tasks.

Product Attributes

Brand: SLKOR Micro
Model: SL3405
Package: SOT-23
Channel Type: P-Channel Enhancement-Mode
Origin: Not specified
Material: Not specified
Color: Not specified
Certifications: Not specified

Technical Specifications

Characteristic	Symbol	Min	Typ	Max	Unit	Conditions
Drain-Source Breakdown Voltage	BVDSS	-30	-	-	V	ID = -250uA, VGS=0V
Gate Threshold Voltage	VGS(th)	-1.3	-	-2.3	V	ID = -250uA, VGS= VDS
Diode Forward Voltage Drop	VSD	-	-	-1	V	IS = -1A, VGS=0V
Zero Gate Voltage Drain Current	IDSS	-	-	-1	uA	VGS=0V, VDS= -24V (TA=25)
Zero Gate Voltage Drain Current	IDSS	-	-	-5	uA	VGS=0V, VDS= -24V (TA=55)
Gate Body Leakage	IGSS	-	-	+100	nA	VGS=+12V, VDS=0V
Static Drain-Source On-State Resistance	RDS(ON)	-	-	130	m	ID= -2.6A, VGS= -10V
Static Drain-Source On-State Resistance	RDS(ON)	-	-	180	m	ID= -2A, VGS= -4.5V
Input Capacitance	CISS	-	854	-	pF	VGS=0V, VDS= -15V, f=1MHz
Output Capacitance	COSS	-	105	-	pF	VGS=0V, VDS= -15V, f=1MHz
Turn-ON Time	t(on)	-	9	-	ns	VDS= -15V, VGS= -10V, RGEN=6
Turn-OFF Time	t(off)	-	38	-	ns	VDS= -15V, VGS= -10V, RGEN=6

Maximum Ratings

Characteristic	Symbol	Max	Unit	Conditions
Drain-Source Voltage	BVDSS	-30	V
Gate-Source Voltage	VGS	+12	V
Drain Current (continuous)	ID	-2.6	A
Drain Current (pulsed)	IDM	-18	A	Pulse Width<300s; Duty Cycle<2.0%
Total Device Dissipation	PD	1000	mW	TA=25
Junction Temperature	TJ	150
Storage Temperature	Tstg	-55to+150