100V P Channel Power MOSFET with Fast Switching and Low RDS on Siliup SP010P70GTH in TO 252 Package
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Product Description
Product Overview
The SP010P70GTH is a 100V P-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy, making it suitable for battery management and uninterruptible power supply systems. It is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP010P70GTH
- Package: TO-252
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | -100 | V | |||
| Drain-Source ON Resistance | RDS(on)TYP | @-10V | 70 | 88 | m | |
| Drain-Source ON Resistance | RDS(on)TYP | @-4.5V | 85 | 115 | m | |
| Continuous Drain Current | ID | (Tc=25) | -20 | A | ||
| Continuous Drain Current | ID | (Tc=100) | -13 | A | ||
| Pulsed Drain Current | IDM | -80 | A | |||
| Single Pulse Avalanche Energy | EAS | 1 | 110 | mJ | ||
| Power Dissipation | PD | (Tc=25) | 70 | W | ||
| Drain-Source Breakdown Voltage | BVDSS | ID = -250A, VGS = 0V | -100 | V | ||
| Drain Cut-Off Current | IDSS | VDS = -80V, VGS = 0V | -1 | uA | ||
| Gate Leakage Current | IGSS | VGS = 20V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =-250uA | -1 | -1.7 | -2.5 | V |
| Input Capacitance | Ciss | VDS=-50V, VGS =-10V, f=1.0MHz | 1050 | pF | ||
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 23 | pF | |||
| Total Gate Charge | Qg | VDS=-50V , VGS=-10V , ID=10A | 20 | nC | ||
| Gate-Source Charge | Qgs | 4 | nC | |||
| Gate-Drain Charge | Qg | 4.4 | nC | |||
| Turn-On Delay Time | td(on) | VGS=-10V,VDD=-50V, ID=-5A, RG=6 | 15 | nS | ||
| Rise Time | tr | 30 | nS | |||
| Turn-Off Delay Time | td(off) | 73 | nS | |||
| Fall Time | tf | 76 | nS | |||
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=-1A , TJ=25 | -1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | -20 | A | |||
| Reverse Recovery Time | Trr | IS=-5A, di/dt=-100A/us, TJ=25 | 72 | nS | ||
| Reverse Recovery Charge | Qrr | 136 | nC |
Note: 1. The EAS test condition is VDD=-50V,VGS=-10V,L=0.5mH,RG=25
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