Compact SOT 23 Package Slkor SL3402 Power MOSFET Optimized for Portable Device Power Management

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Product Description

Product Overview

The SL3402 is an N-Channel Power MOSFET optimized for power management applications in portable products. It is suitable for use in H-bridges, inverters, car chargers, and other similar circuits. Key features include a VDS of 30V, ID of 4A, and low on-state resistance (RDS(ON)) at various gate-source voltages.

Product Attributes

Brand: SLKORMicro
Product Name: SL3402
Package Type: SOT-23

Technical Specifications

Symbol	Parameter	Condition	Min	Typ	Max	Unit
Common Ratings (TA=25C Unless Otherwise Noted)
V_GS	Gate-Source Voltage				±20	V
V_(BR)DSS	Drain-Source Breakdown Voltage		30			V
T_J	Maximum Junction Temperature				150	°C
T_STG	Storage Temperature Range		-50		150	°C
I_DM	Pulse Drain Current	Mounted on Large Heat Sink, TA=25°C			20.4	A
I_D	Continuous Drain Current	VGS=4.5V, TA=25°C			4	A
I_D	Continuous Drain Current	VGS=4.5V, TA=70°C			3.2	A
P_D	Maximum Power Dissipation	TA=25°C			1.5	W
P_D	Maximum Power Dissipation	TA=70°C			0.9	W
θ_JA	Thermal Resistance Junction-Ambient		80	-	100	°C/W
General Features
VDS	Drain-Source Voltage				30	V
ID	Drain Current				4	A
R_DS(ON)	Drain-Source On-State Resistance	VGS=4.5V			60	mΩ
R_DS(ON)	Drain-Source On-State Resistance	VGS=10V			50	mΩ
Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
V_(BR)DSS	Drain-Source Breakdown Voltage	VGS=0V, ID=250μA	30			V
I_DSS	Zero Gate Voltage Drain Current	VDS=30V, VGS=0V, TA=25°C			1	μA
I_DSS	Zero Gate Voltage Drain Current	VDS=30V, VGS=0V, TA=125°C			100	μA
I_GSS	Gate-Body Leakage Current	VGS=±20V, VDS=0V			±100	nA
V_GS(TH)	Gate Threshold Voltage	VDS=VGS, ID=250μA	0.5	0.9	1.5	V
R_DS(ON)	Drain-Source On-State Resistance	VGS=10V, ID=4A		29	50	mΩ
R_DS(ON)	Drain-Source On-State Resistance	VGS=4.5V, ID=3A		44	60	mΩ
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated)
C_iss	Input Capacitance	VDS=24V, VGS=0V, f=1MHz		300		pF
C_oss	Output Capacitance			44		pF
C_rss	Reverse Transfer Capacitance			38		pF
Q_g	Total Gate Charge	VDS=24V, ID=2A, VGS=10V		3.5		nC
Q_gs	Gate Source Charge			0.4		nC
Q_gd	Gate Drain Charge			1.7		nC
Switching Characteristics
t_d(on)	Turn on Delay Time	VDD=24V, ID=5A, RG=3.3Ω, VGS=10V		2.2		ns
t_r	Turn on Rise Time			6.9		ns
t_d(off)	Turn Off Delay Time			15.5		ns
t_f	Turn Off Fall Time			4.5		ns
Source Drain Diode Characteristics
I_SD	Source drain current (Body Diode)	TA=25°C			1.8	A
V_SD	Forward on voltage	Tj=25°C, ISD=5A, VGS=0V			1.2	V