Power MOSFET Siliup SP60P90T8 60V P Channel with Continuous Drain Current and Surface Mount Package

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Product Description

Product Overview

The SP60P90T8 is a 60V P-Channel MOSFET from Siliup Semiconductor Technology Co. Ltd. Designed for high power and current handling, this surface-mount device is ideal for applications such as battery switches and DC/DC converters. It offers robust performance with a continuous drain current of -5A and a low on-resistance.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Type: P-Channel MOSFET
Package: SOT-89-3L

Technical Specifications

Parameter	Symbol	Conditions	Value	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS		-60	V
On-Resistance (Typical)	RDS(on)TYP	@-10V	90	m
On-Resistance (Typical)	RDS(on)TYP	@-4.5V	110	m
Continuous Drain Current	ID		-5	A
Absolute Maximum Ratings
Drain-Source Voltage	VDSS	(Ta=25, unless otherwise noted)	-60	V
Gate-Source Voltage	VGSS	(Ta=25, unless otherwise noted)	20	V
Continuous Drain Current	ID	(Ta=25, unless otherwise noted)	-5	A
Pulse Drain Current	IDM	(Tested, Ta=25, unless otherwise noted)	-20	A
Power Dissipation	PD	(Ta=25, unless otherwise noted)	1	W
Thermal Resistance Junction-to-Ambient	RJA	(Ta=25, unless otherwise noted)	125	C/W
Storage Temperature Range	TSTG	(Ta=25, unless otherwise noted)	-55 to 150	C
Operating Junction Temperature Range	TJ	(Ta=25, unless otherwise noted)	-55 to 150	C
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=-250A	-60	V
Drain-Source Leakage Current	IDSS	VDS=-48V , VGS=0V	-	-1 uA
Gate-Source Leakage Current	IGSS	VGS=20V , VDS=0V	-	100 nA
Gate Threshold Voltage	VGS(th)	VDS=VGS , ID=-250A	-1.0 to -2.2	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=-10V , ID =-3A	90 to 120	m
Static Drain-Source On-Resistance	RDS(ON)	VGS=-4.5V , ID =-2.5A	110 to 140	m
Input Capacitance	Ciss	VDS=-30V , VGS=0V , f=1MHz	960	pF
Output Capacitance	Coss	VDS=-30V , VGS=0V , f=1MHz	87	pF
Reverse Transfer Capacitance	Crss	VDS=-30V , VGS=0V , f=1MHz	38	pF
Total Gate Charge	Qg	VDS=-30V , VGS=-10V , ID=-4A	15.7	nC
Gate-Source Charge	Qgs	VDS=-30V , VGS=-10V , ID=-4A	3	nC
Gate-Drain Charge	Qg	VDS=-30V , VGS=-10V , ID=-4A	3.5	nC
Turn-On Delay Time	td(on)	VDD=-30V VGS=-10V , RG=3 , ID=-5A	9	nS
Turn-On Rise Time	tr	VDD=-30V VGS=-10V , RG=3 , ID=-5A	11	nS
Turn-Off Delay Time	td(off)	VDD=-30V VGS=-10V , RG=3 , ID=-5A	25	nS
Turn-Off Fall Time	tf	VDD=-30V VGS=-10V , RG=3 , ID=-5A	12	nS
Diode Forward Voltage	VSD	VGS=0V , IS=-1A , TJ=25	-1.2	V
Package Outline (SOT-89-3L)
Symbol	Dimensions (Millimeters)	Min.	Max.
A		1.400	1.600
b		0.320	0.520
b1		0.400	0.580
c		0.350	0.440
D		4.400	4.600
D1		1.550 (REF)
D2		1.750 (REF)
E		2.300	2.600
E1		3.940	4.250
E2		1.900 (REF)
e		1.500 (TYP)
e1		3.000 (TYP)
L		0.900	1.200
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