Low Gate Charge 60V Planar MOSFET Siliup SP3205TQ for Synchronous Rectification and Power Conversion

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Product Description

Product Overview

The SP3205TQ is a 60V N-Channel Planar MOSFET from Siliup Semiconductor Technology Co. Ltd. It features fast switching, low gate charge, and low RDS(on), making it ideal for high-frequency switching and synchronous rectification applications, particularly in DC-DC converters. The device is 100% tested for single pulse avalanche energy.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Device Code: SP3205TQ
Package: TO-220-3L
Material: Planar MOSFET

Technical Specifications

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Product Summary
Drain-Source Voltage	V(BR)DSS				60	V
RDS(on)Typ		@10V		7		m
Continuous Drain Current	ID				110	A
Absolute Maximum Ratings
Drain-Source Voltage	VDS	(Ta=25)			60	V
Gate-Source Voltage	VGS	(Ta=25)		25		V
Continuous Drain Current	ID	(TC=25)			110	A
Continuous Drain Current	ID	(TC=100)			73.3	A
Pulsed Drain Current	IDM	(Ta=25)			440	A
Single Pulse Avalanche Energy	EAS	(Ta=25)			870	mJ
Power Dissipation	PD	(TC=25)			200	W
Thermal Resistance Junction-to-Case	RJC	(TC=25)			0.625	/W
Storage Temperature Range	TSTG		-55		150
Operating Junction Temperature Range	TJ		-55		150
Electrical Characteristics
Drain-Source Breakdown Voltage	BVDSS	VGS=0V , ID=250uA	60	-	-	V
Drain-Source Leakage Current	IDSS	VDS=48V , VGS=0V , TJ=25	-	-	3	uA
Gate-Source Leakage Current	IGSS	VGS=25V , VDS=0V	-	-	100	nA
Gate Threshold Voltage	VGS(th)	VGS=VDS , ID =250uA	2	3	4	V
Static Drain-Source On-Resistance	RDS(ON)	VGS=10V , ID=20A	-	7	10	m
Input Capacitance	Ciss	VDS=25V , VGS=0V , f=1MHz	-	3265	-	pF
Output Capacitance	Coss	VDS=25V , VGS=0V , f=1MHz	-	772	-	pF
Reverse Transfer Capacitance	Crss	VDS=25V , VGS=0V , f=1MHz	-	291	-	pF
Total Gate Charge	Qg	VDS=44V , VGS=10V , ID=20A	-	77	-	nC
Gate-Source Charge	Qgs	VDS=44V , VGS=10V , ID=20A	-	11	-	nC
Gate-Drain Charge	Qgd	VDS=44V , VGS=10V , ID=20A	-	20	-	nC
Turn-On Delay Time	Td(on)	VDD=28V VGS=10V , RG=4.5, ID=20A	-	14	-	nS
Rise Time	Tr	VDD=28V VGS=10V , RG=4.5, ID=20A	-	101	-	nS
Turn-Off Delay Time	Td(off)	VDD=28V VGS=10V , RG=4.5, ID=20A	-	50	-	nS
Fall Time	Tf	VDD=28V VGS=10V , RG=4.5, ID=20A	-	65	-	nS
Diode Forward Voltage	VSD	VGS=0V , IS=1A , TJ=25	-	-	1.2	V
Maximum Body-Diode Continuous Current	IS		-	-	110	A
Reverse Recovery Time	Trr	IS=62A, di/dt=100A/us, TJ=25	-	75	-	nS
Reverse Recovery Charge	Qrr	IS=62A, di/dt=100A/us, TJ=25	-	145	-	nC

Package Information (TO-220-3L)

Symbol	Dimensions In Millimeters	Dimensions In Inches
	Min.	Max.	Min.	Max.
A	4.400	4.600	0.173	0.181
A1	2.250	2.550	0.089	0.100
b	0.710	0.910	0.028	0.036
b1	1.170	1.370	0.046	0.054
c	0.330	0.650	0.013	0.026
c1	1.200	1.400	0.047	0.055
D	9.910	10.250	0.390	0.404
E	8.950	9.750	0.352	0.384
E1	12.650	13.050	0.498	0.514
e	2.540 TYP.	0.100 TYP.
e1	4.980	5.180	0.196	0.204
F	2.650	2.950	0.104	0.116
H	7.900	8.100	0.311	0.319
h	0.000	0.300	0.000	0.012
L	12.900	13.400	0.508	0.528
L1	2.850	3.250	0.112	0.128
V	6.900 REF.	0.276 REF.
	3.400	3.800	0.134	0.150