Power Switching MOSFET Siliup SP60N12GTH 60V N Channel with Low Gate Charge and Avalanche Energy Test
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
The SP60N12GTH is a 60V N-Channel Power MOSFET from Siliup Semiconductor Technology Co. Ltd., designed for power switching applications. It features fast switching, low gate charge, and low RDS(on) thanks to its advanced split gate trench technology. This MOSFET is 100% tested for single pulse avalanche energy and is suitable for hard switched and high frequency circuits, as well as uninterruptible power supply systems. The product is available in a TO-252 package.
Product Attributes
- Brand: Siliup Semiconductor Technology Co. Ltd.
- Product Code: SP60N12GTH
- Package: TO-252
- Channel Type: N-Channel
- Technology: Advanced Split Gate Trench Technology
Technical Specifications
| Parameter | Symbol | Test Condition | Rating | Unit |
|---|---|---|---|---|
| Drain-Source Voltage | V(BR)DSS | 60 | V | |
| RDS(on) Typ. (VGS=10V) | RDS(on)TYP | @10V | 12 | m |
| RDS(on) Typ. (VGS=4.5V) | RDS(on)TYP | @4.5V | 15 | m |
| Continuous Drain Current | ID | (Tc=25C) | 30 | A |
| Continuous Drain Current | ID | (Tc=100C) | 20 | A |
| Pulse Drain Current | IDM | Tested | 120 | A |
| Single Pulse Avalanche Energy | EAS | 100 | mJ | |
| Power Dissipation | PD | (Tc=25C) | 55 | W |
| Thermal Resistance Junction-to-Case | RJC | 2.27 | C/W | |
| Maximum Junction Temperature | TJ | -55 to 150 | C | |
| Storage Temperature Range | TSTG | -55 to 150 | C | |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250mA | 60 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | - | 1 uA |
| Gate Leakage Current | IGSS | VGS=20V, VDS=0V | - | 100 nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250uA | 1 to 2.5 | V |
| Drain-Source On-state Resistance | RDS(ON) | VGS=10V, ID=20A | - 12 16 | m |
| Drain-Source On-state Resistance | RDS(ON) | VGS=4.5V, ID=10A | - 15 22 | m |
| Input Capacitance | Ciss | VGS=0V, VDS=30V, F=1MHz | - 940 | pF |
| Output Capacitance | Coss | - 235 | pF | |
| Reverse Transfer Capacitance | Crss | - 10 | pF | |
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | - 23 | nC |
| Gate-Source Charge | Qgs | - 4.8 | nC | |
| Gate-Drain Charge | Qg | - 4.0 | nC | |
| Turn-On Delay Time | td(on) | VDD=30V, ID=20A, VGS=10V, RG=4.7 | - 4.7 | nS |
| Rise Time | tr | - 2.9 | nS | |
| Turn-Off Delay Time | td(off) | - 14 | nS | |
| Fall Time | tf | - 2.9 | nS | |
| Source-Drain Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | - 1.2 | V |
| Maximum Body-Diode Continuous Current | IS | - 30 | A | |
| Reverse Recovery Time | Trr | IS=20 A,di/dt=100 A/sTJ=25 | - 19 | nS |
| Reverse Recovery Charge | Qrr | - 12 | nC |
| TO-252 Package Information | Dimensions In Millimeters | Dimensions In Inches | |||
|---|---|---|---|---|---|
| Symbol | Min. | Max. | Min. | Max. | |
| A | 2.200 | 2.400 | 0.087 | 0.094 | |
| A1 | 0.000 | 0.127 | 0.000 | 0.005 | |
| b | 0.660 | 0.860 | 0.026 | 0.034 | |
| c | 0.460 | 0.580 | 0.018 | 0.023 | |
| D | 6.500 | 6.700 | 0.256 | 0.264 | |
| D1 | 5.100 | 5.460 | 0.201 | 0.215 | |
| D2 | 4.830 REF. | 0.190 REF. | |||
| E | 6.000 | 6.200 | 0.236 | 0.244 | |
| e | 2.186 | 2.386 | 0.086 | 0.094 | |
| L | 9.800 | 10.400 | 0.386 | 0.409 | |
| L1 | 2.900 REF. | 0.114 REF. | |||
| L2 | 1.400 | 1.700 | 0.055 | 0.067 | |
| L3 | 1.600 REF. | 0.063 REF. | |||
| L4 | 0.600 | 1.000 | 0.024 | 0.039 | |
| 1.100 | 1.300 | 0.043 | 0.051 | ||
| 0 | 8 | 0 | 8 | ||
| h | 0.000 | 0.300 | 0.000 | 0.012 | |
| V | 5.350 REF. | 0.211 REF. | |||
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