20V TrenchFET Complementary MOSFET Siliup SP2011ACTM Designed for DC DC Converters and Motor Control

Price Negotiable

Price: Negotiable

MOQ: Negotiable

Delivery Time: Negotiable

Product Description

Product Overview

The SP2011ACTM is a 20V Complementary MOSFET from Siliup Semiconductor Technology Co. Ltd. It features TrenchFET technology for excellent RDS(on) and low gate charge, enabling fast switching speeds. This MOSFET is suitable for applications such as motor control, DC-DC converters, and power management.

Product Attributes

Brand: Siliup Semiconductor Technology Co. Ltd.
Product Line: SP2011ACTM
Technology: TrenchFET Power MOSFET
Package: TO-252-4L

Technical Specifications

SP2011ACTM 20V Complementary MOSFET
Parameter	Symbol	N-Channel	P-Channel
Product Summary
Drain-Source Voltage (V(BR)DSS)	V(BR)DSS	20V	-20V
On-Resistance (RDS(on) Typ)	RDS(on)	8m@10V, 10m@4.5V	9m@-10V, 11m@-4.5V
Continuous Drain Current (ID)	ID	35A	-38A
Absolute Maximum Ratings (Ta=25 unless otherwise noted)
Drain-Source Voltage	VDS	20V	-20V
Gate-Source Voltage	VGS	12V	12V
Continuous Drain Current	ID	35A	-38A
Drain Current Pulsed	IDM	140A	152A
Power Dissipation	PD	32.8W
Thermal Resistance Junction to Cassette	RJC	3.8 /W
Junction Temperature	TJ	150
Storage Temperature	TSTG	-55~ +150
N-Channel Electrical Characteristics (TA=25 C, unless otherwise noted)
Drain-source breakdown voltage	V(BR)DSS	20V	-
Zero gate voltage drain current	IDSS	1 A	-
Gate-body leakage current	IGSS	0.1 A	-
Gate threshold voltage	VGS(th)	0.5 - 1.0 V	-
Drain-source on-resistance	RDS(on)	8 - 10 m (VGS=4.5V, ID=10A) 10 - 15 m (VGS=2.5V, ID=8A)	-
Input Capacitance	Ciss	1196 pF	-
Output Capacitance	Coss	178 pF	-
Reverse Transfer Capacitance	Crss	146 pF	-
Total gate charge	Qg	13.4 nC	-
Gate-source charge	Qgs	2.6 nC	-
Gate-drain charge	Qgd	3.4 nC	-
Turn-on delay time	td(on)	7.8 ns	-
Turn-on rise time	tr	19.4 ns	-
Turn-off delay time	td(off)	31 ns	-
Turn-off fall time	tf	12 ns	-
Diode Forward Voltage	VSD	1.2 V	-
P-Channel Electrical Characteristics (TA=25 C, unless otherwise noted)
Drain-source breakdown voltage	V(BR)DSS	-	-20V
Zero gate voltage drain current	IDSS	-	-1 A
Gate-body leakage current	IGSS	-	100 nA
Gate threshold voltage	VGS(th)	-	-0.5 - -1.0 V
Drain-source on-resistance	RDS(on)	-	9 - 11.5 m (VGS=-10V, ID=-10A) 11 - 15 m (VGS=-4.5V, ID=-8A)
Input Capacitance	Ciss	-	2872 pF
Output Capacitance	Coss	-	332 pF
Reverse Transfer Capacitance	Crss	-	274 pF
Turn-on delay time	td(on)	-	8 ns
Turn-on rise time	tr	-	33 ns
Turn-off delay time	td(off)	-	132 ns
Turn-off fall time	tf	-	131 ns
Total gate charge	Qg	-	72.8 nC
Gate-source charge	Qgs	-	6.7 nC
Gate-drain charge	Qg	-	10.3 nC
Source-Drain Diode Voltage	VSD	-	-1.2 V