High Voltage Power MOSFET Slkor SL22N65CF Featuring Superjunction Technology and Low On Resistance
Price:
Negotiable
MOQ:
Negotiable
Delivery Time:
Negotiable
Product Description
Product Overview
This Power MOSFET, produced using Slkor's advanced Superjunction MOSFET technology, is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. These devices are well-suited for high-efficiency switched-mode power supplies.
Product Attributes
- Brand: Slkor
- Model Series: SL22N65C/SL22N65CF
- Technology: Superjunction MOSFET
Technical Specifications
| Model | Parameter | Test Conditions | Min | Typ | Max | Units |
| SL22N65C/SL22N65CF | Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1mA | 650 | -- | -- | V |
| SL22N65C/SL22N65CF | Drain-Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 1mA, TJ = 150 | 650 | -- | -- | V |
| SL22N65C/SL22N65CF | Zero Gate Voltage Drain Current (IDSS) | VDS = 600 V, VGS = 0 V | -- | -- | 1 | uA |
| SL22N65C/SL22N65CF | Zero Gate Voltage Drain Current (IDSS) | VDS = 480 V, TC = 125 | -- | 2 | -- | uA |
| SL22N65C/SL22N65CF | Gate-Body Leakage Current, Forward (IGSSF) | VGS = 30 V, VDS = 0 V | -- | -- | 100 | nA |
| SL22N65C/SL22N65CF | Gate-Body Leakage Current, Reverse (IGSSR) | VGS = -30 V, VDS = 0 V | -- | -- | -100 | nA |
| SL22N65C/SL22N65CF | Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = 1.7mA | 2.5 | -- | 4.5 | V |
| SL22N65C/SL22N65CF | Static Drain-Source On-Resistance (RDS(on)) | VGS = 10 V, ID = 10 A | -- | 150 | 170 | m |
| SL22N65C/SL22N65CF | Input Capacitance (Ciss) | VDS = 400 V, VGS = 0 V, f = 250KHz | -- | 1240 | -- | pF |
| SL22N65C/SL22N65CF | Output Capacitance (Coss) | VDS = 400 V, VGS = 0 V, f = 250KHz | -- | 34 | -- | pF |
| SL22N65C/SL22N65CF | Reverse Transfer Capacitance (Crss) | VDS = 400 V, VGS = 0 V, f = 250KHz | -- | 3.2 | -- | pF |
| SL22N65C/SL22N65CF | Turn-On Delay Time (td(on)) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 12 | -- | ns |
| SL22N65C/SL22N65CF | Turn-On Rise Time (tr) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 8 | -- | ns |
| SL22N65C/SL22N65CF | Turn-Off Delay Time (td(off)) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 53 | -- | ns |
| SL22N65C/SL22N65CF | Turn-Off Fall Time (tf) | VDS = 400 V, ID = 10 A, RG = 10 ,VGS = 10 V | -- | 10 | -- | ns |
| SL22N65C/SL22N65CF | Total Gate Charge (Qg) | VDS = 400 V, ID = 10 A, VGS = 10 V | -- | 30.2 | -- | nC |
| SL22N65C/SL22N65CF | Gate-Source Charge (Qgs) | VDS = 400 V, ID = 10 A, VGS = 10 V | -- | 5.8 | -- | nC |
| SL22N65C/SL22N65CF | Gate-Drain Charge (Qgd) | VDS = 400 V, ID = 10 A, VGS = 10 V | -- | 15.4 | -- | nC |
| SL22N65C/SL22N65CF | Gate Resistance (RG) | f = 1MHz | -- | 1.3 | -- | |
| SL22N65C/SL22N65CF | Maximum Continuous Drain-Source Diode Forward Current (IS) | -- | -- | -- | 22 | A |
| SL22N65C/SL22N65CF | Maximum Pulsed Drain-Source Diode Forward Current (ISM) | -- | -- | -- | 57 | A |
| SL22N65C/SL22N65CF | Drain-Source Diode Forward Voltage (VSD) | VGS = 0 V, IS = 10 A | -- | -- | 1.2 | V |
| SL22N65C/SL22N65CF | Reverse Recovery Time (trr) | VDD = 400 V, IS = 10A, dIF / dt = 100 A/us | -- | 274 | -- | ns |
| SL22N65C/SL22N65CF | Reverse Recovery Charge (Qrr) | VDD = 400 V, IS = 10A, dIF / dt = 100 A/us | -- | 3.33 | -- | uC |
| SL22N65C/SL22N65CF | Drain Current - Continuous (ID) | TC = 25 | -- | -- | 22* | A |
| SL22N65C/SL22N65CF | Drain Current - Continuous (ID) | TC = 100 | -- | -- | 12* | A |
| SL22N65C/SL22N65CF | Drain Current - Pulsed (IDM) | Note 1 | -- | -- | 57* | A |
| SL22N65C/SL22N65CF | Gate-Source Voltage (VGSS) | -- | -- | 30 | -- | V |
| SL22N65C/SL22N65CF | Single Pulsed Avalanche Energy (EAS) | Note 2 | -- | 985 | -- | mJ |
| SL22N65C/SL22N65CF | Avalanche Current (IAR) | Note 1 | -- | 4 | -- | A |
| SL22N65C/SL22N65CF | Repetitive Avalanche Energy (EAR) | Note 1 | -- | 1.62 | -- | mJ |
| SL22N65C/SL22N65CF | Peak Diode Recovery dv/dt | Note 3 | -- | 20 | -- | V/ns |
| SL22N65C/SL22N65CF | MOSFET dv/dt | -- | -- | 100 | -- | -- |
| SL22N65C/SL22N65CF | Power Dissipation (PD) | TC = 25 | -- | -- | 36 | W |
| SL22N65C/SL22N65CF | Power Dissipation Derate | above 25 | -- | -- | 0.29 | W/ |
| SL22N65C/SL22N65CF | Operating and Storage Temperature Range (TJ, TSTG) | -- | -55 | -- | +150 | |
| SL22N65C/SL22N65CF | Maximum lead temperature for soldering purposes | 1/8" from case for 5 seconds | -- | -- | 260 | |
| SL22N65C/SL22N65CF | Thermal Resistance, Junction-to-Case (RJC) | -- | -- | 3.5 | -- | /W |
| SL22N65C/SL22N65CF | Thermal Resistance, Junction-to-Ambient (RJA) | -- | -- | 62.5 | -- | /W |
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Company
Hefei Purple Horn E-Commerce Co., Ltd.
Location
Room 1306B, Building A, Xindi Center, Qimen Road, Hefei City, Anhui Province
Contact Person
Sellina